Bauknecht, Andreas ; Blieske, U. ; Kampschulte, T. ; Albert, J. ; Sehnert, H. ; Lux-Steiner, Martha Ch. ; Klein, Andreas ; Jaegermann, Wolfram (1999)
Band offsets at the ZnSe/CuGaSe₂(001) heterointerface.
In: Applied Physics Letters, 74 (8)
doi: 10.1063/1.123455
Article, Bibliographie
This is the latest version of this item.
Abstract
The formation of the ZnSe/CuGaSe₂ heterointerface was studied by x-ray photoelectron spectroscopy (XPS). ZnSe was sequentially grown on CuGaSe₂(001) epilayers. In situ photoemission spectra of the Ga 3d and Zn 3d core levels as well as XPS valence bands were acquired after each deposition step. The valence-band offset is determined to be ΔEV=0.6±0.1 eV. As a consequence, a nearly symmetric "type-I" band alignment for the ZnSe/CuGaSe₂ heterojunction with a conduction-band offset of ΔEC=0.4±0.1 eV is found. Concerning the band alignment ZnSe can, therefore, be expected to be a suitable buffer material for CuGaSe₂-based thin-film solar cells.
| Item Type: | Article |
|---|---|
| Erschienen: | 1999 |
| Creators: | Bauknecht, Andreas ; Blieske, U. ; Kampschulte, T. ; Albert, J. ; Sehnert, H. ; Lux-Steiner, Martha Ch. ; Klein, Andreas ; Jaegermann, Wolfram |
| Type of entry: | Bibliographie |
| Title: | Band offsets at the ZnSe/CuGaSe₂(001) heterointerface |
| Language: | English |
| Date: | 1999 |
| Publisher: | AIP Publishing |
| Journal or Publication Title: | Applied Physics Letters |
| Volume of the journal: | 74 |
| Issue Number: | 8 |
| DOI: | 10.1063/1.123455 |
| Corresponding Links: | |
| Abstract: | The formation of the ZnSe/CuGaSe₂ heterointerface was studied by x-ray photoelectron spectroscopy (XPS). ZnSe was sequentially grown on CuGaSe₂(001) epilayers. In situ photoemission spectra of the Ga 3d and Zn 3d core levels as well as XPS valence bands were acquired after each deposition step. The valence-band offset is determined to be ΔEV=0.6±0.1 eV. As a consequence, a nearly symmetric "type-I" band alignment for the ZnSe/CuGaSe₂ heterojunction with a conduction-band offset of ΔEC=0.4±0.1 eV is found. Concerning the band alignment ZnSe can, therefore, be expected to be a suitable buffer material for CuGaSe₂-based thin-film solar cells. |
| Classification DDC: | 500 Science and mathematics > 530 Physics |
| Divisions: | 11 Department of Materials and Earth Sciences 11 Department of Materials and Earth Sciences > Material Science 11 Department of Materials and Earth Sciences > Material Science > Surface Science |
| Date Deposited: | 02 Aug 2024 12:37 |
| Last Modified: | 02 Aug 2024 12:37 |
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| Suche nach Titel in: | TUfind oder in Google |
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Band offsets at the ZnSe/CuGaSe₂(001) heterointerface. (deposited 08 Nov 2021 12:10)
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