TU Darmstadt / ULB / TUbiblio

Impact of non‐stoichiometric phases and grain boundaries on the nanoscale forming and switching of HfOₓ thin films

Schmidt, Niclas ; Kaiser, Nico ; Vogel, Tobias ; Piros, Eszter ; Karthäuser, Silvia ; Waser, Rainer ; Alff, Lambert ; Dittmann, Regina (2024)
Impact of non‐stoichiometric phases and grain boundaries on the nanoscale forming and switching of HfOₓ thin films.
In: Advanced Electronic Materials, 10 (4)
doi: 10.1002/aelm.202300693
Article, Bibliographie

This is the latest version of this item.

Abstract

HfO₂ is one of the most common memristive materials and it is widely accepted that oxygen vacancies are prerequisite to reduce the forming voltage of the respective memristive devices. Here, a series of six oxygen engineered substoichiometric HfO₂₋ₓ thin films with varying oxygen deficiency is investigated by conductive atomic force microscopy (c‐AFM) and the switching process of substoichiometric films is observed on the nanoscale. X‐ray diffractometry (XRD) exhibits a phase transition from stoichiometric, monoclinic HfO₂ toward oxygen deficient, rhombohedral HfO₁.₇. The conductance of HfO₂₋ₓ is increasing with increasing oxygen deficiency, which is consistent with the increasing prevalence of the highly conductive rhombohedral phase. Simultaneously, c‐AFM reveals significant local conductivity differences between grains and grain boundaries, regardless of the level of oxygen deficiency. Single grains of highly oxygen deficient samples are formed at significant lower voltages. The mean forming voltage is reduced from (7.0 ± 0.6) V for HfO₂ to (1.9 ± 0.8) V for HfO₁.₇. Resistive switching on the nanoscale is established for single grains for the highest deficient thin film samples. The final resistance state is thereby dependent on the initial conductivity of the grains. These studies offer valuable insights into the switching behavior of memristive polycrystalline HfO₂.

Item Type: Article
Erschienen: 2024
Creators: Schmidt, Niclas ; Kaiser, Nico ; Vogel, Tobias ; Piros, Eszter ; Karthäuser, Silvia ; Waser, Rainer ; Alff, Lambert ; Dittmann, Regina
Type of entry: Bibliographie
Title: Impact of non‐stoichiometric phases and grain boundaries on the nanoscale forming and switching of HfOₓ thin films
Language: English
Date: April 2024
Place of Publication: Weinheim
Publisher: Wiley-VCH
Journal or Publication Title: Advanced Electronic Materials
Volume of the journal: 10
Issue Number: 4
Collation: 10 Seiten
DOI: 10.1002/aelm.202300693
Corresponding Links:
Abstract:

HfO₂ is one of the most common memristive materials and it is widely accepted that oxygen vacancies are prerequisite to reduce the forming voltage of the respective memristive devices. Here, a series of six oxygen engineered substoichiometric HfO₂₋ₓ thin films with varying oxygen deficiency is investigated by conductive atomic force microscopy (c‐AFM) and the switching process of substoichiometric films is observed on the nanoscale. X‐ray diffractometry (XRD) exhibits a phase transition from stoichiometric, monoclinic HfO₂ toward oxygen deficient, rhombohedral HfO₁.₇. The conductance of HfO₂₋ₓ is increasing with increasing oxygen deficiency, which is consistent with the increasing prevalence of the highly conductive rhombohedral phase. Simultaneously, c‐AFM reveals significant local conductivity differences between grains and grain boundaries, regardless of the level of oxygen deficiency. Single grains of highly oxygen deficient samples are formed at significant lower voltages. The mean forming voltage is reduced from (7.0 ± 0.6) V for HfO₂ to (1.9 ± 0.8) V for HfO₁.₇. Resistive switching on the nanoscale is established for single grains for the highest deficient thin film samples. The final resistance state is thereby dependent on the initial conductivity of the grains. These studies offer valuable insights into the switching behavior of memristive polycrystalline HfO₂.

Uncontrolled Keywords: c‐AFM, defect engineering, grain boundaries, hafnium oxide, MBE, resistive switching
Identification Number: Artikel-ID: 2300693
Classification DDC: 600 Technology, medicine, applied sciences > 660 Chemical engineering
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Advanced Thin Film Technology
Date Deposited: 13 Jun 2024 06:40
Last Modified: 17 Jun 2024 09:54
PPN: 519187431
Export:
Suche nach Titel in: TUfind oder in Google

Available Versions of this Item

Send an inquiry Send an inquiry

Options (only for editors)
Show editorial Details Show editorial Details