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Configurable resistive response in BaTiO3 ferroelectric memristors via electron beam radiation

Molinari, Alan ; Witte, Ralf ; Neelisetty, Krishna Kanth ; Gorji, Saleh ; Kübel, Christian ; Münch, Ingo ; Wöhler, Franziska ; Hahn, Lothar ; Hengsbach, Stefan ; Bade, Klaus ; Hahn, Horst ; Kruk, Robert (2020)
Configurable resistive response in BaTiO3 ferroelectric memristors via electron beam radiation.
In: Advanced Materials, 32 (12)
doi: 10.1002/adma.201907541
Article, Bibliographie

Abstract

Ferroelectric oxide memristors are currently in the highlights of a thriving area of research aiming at the development of nonvolatile, adaptive memories for applications in neuromorphic computing. However, to date a precise control of synapse-like functionalities by adjusting the interplay between ferroelectric polarization and resistive switching processes is still an ongoing challenge. Here, it is shown that by means of controlled electron beam radiation, a prototypical ferroelectric film of BaTiO3 can be turned into a memristor with multiple configurable resistance states. Ex situ and in situ analyses of current/voltage characteristics upon electron beam exposure confirm the quasi-continuous variation of BaTiO3 resistance up to two orders of magnitude under the typical experimental conditions employed in electron beam patterning and characterization techniques. These results demonstrate an unprecedented effective route to locally and scalably engineering multilevel ferroelectric memristors via application of moderate electron beam radiation.

Item Type: Article
Erschienen: 2020
Creators: Molinari, Alan ; Witte, Ralf ; Neelisetty, Krishna Kanth ; Gorji, Saleh ; Kübel, Christian ; Münch, Ingo ; Wöhler, Franziska ; Hahn, Lothar ; Hengsbach, Stefan ; Bade, Klaus ; Hahn, Horst ; Kruk, Robert
Type of entry: Bibliographie
Title: Configurable resistive response in BaTiO3 ferroelectric memristors via electron beam radiation
Language: English
Date: March 2020
Publisher: Wiley-VCH
Journal or Publication Title: Advanced Materials
Volume of the journal: 32
Issue Number: 12
DOI: 10.1002/adma.201907541
Abstract:

Ferroelectric oxide memristors are currently in the highlights of a thriving area of research aiming at the development of nonvolatile, adaptive memories for applications in neuromorphic computing. However, to date a precise control of synapse-like functionalities by adjusting the interplay between ferroelectric polarization and resistive switching processes is still an ongoing challenge. Here, it is shown that by means of controlled electron beam radiation, a prototypical ferroelectric film of BaTiO3 can be turned into a memristor with multiple configurable resistance states. Ex situ and in situ analyses of current/voltage characteristics upon electron beam exposure confirm the quasi-continuous variation of BaTiO3 resistance up to two orders of magnitude under the typical experimental conditions employed in electron beam patterning and characterization techniques. These results demonstrate an unprecedented effective route to locally and scalably engineering multilevel ferroelectric memristors via application of moderate electron beam radiation.

Uncontrolled Keywords: BaTiO3, electron beam radiation, ferroelectric memristors, neuromorphic computing, thin film engineering
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > In-situ electron microscopy
Date Deposited: 12 Jun 2024 05:27
Last Modified: 12 Jun 2024 05:27
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