Tarnawski, Z. ; Zakrzewska, K. ; Kim-Ngan, N.-T. H. ; Krupska, M. ; Sowa, S. ; Drogowska, K. ; Havela, L. ; Balogh, A. G. (2024)
Hydrogen storage in Ti, V and their oxides-based thin films.
In: Advances in Natural Sciences: Nanoscience and Nanotechnology, 2014, 6 (1)
doi: 10.26083/tuprints-00020373
Article, Secondary publication, Publisher's Version
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Abstract
We have investigated the hydrogen storage ability and the effect of hydrogenation on structure and physical properties of Ti/V and their oxides-based thin films. A series of Ti–TiO₂ and VOx–TiO₂ thin films with different layer structures, geometries and thicknesses have been prepared by the sputtering technique on different (Si(111), SiO₂, C) substrates. For the Ti–TiO₂–Ti films up to 50 at.% of hydrogen can be stored in the Ti layers, while the hydrogen can penetrate without accumulation through the TiO₂ layer. A large hydrogen storage was also found in some V₂O₅–TiO₂ films. Hydrogen could also remove the preferential orientation in the Ti films and induce a transition of V₂O₅ to VO₂ in the films.
| Item Type: | Article |
|---|---|
| Erschienen: | 2024 |
| Creators: | Tarnawski, Z. ; Zakrzewska, K. ; Kim-Ngan, N.-T. H. ; Krupska, M. ; Sowa, S. ; Drogowska, K. ; Havela, L. ; Balogh, A. G. |
| Type of entry: | Secondary publication |
| Title: | Hydrogen storage in Ti, V and their oxides-based thin films |
| Language: | English |
| Date: | 19 March 2024 |
| Place of Publication: | Darmstadt |
| Year of primary publication: | 2014 |
| Place of primary publication: | Bristol |
| Publisher: | IOP Publishing |
| Journal or Publication Title: | Advances in Natural Sciences: Nanoscience and Nanotechnology |
| Volume of the journal: | 6 |
| Issue Number: | 1 |
| Collation: | 8 Seiten |
| DOI: | 10.26083/tuprints-00020373 |
| URL / URN: | https://tuprints.ulb.tu-darmstadt.de/20373 |
| Corresponding Links: | |
| Origin: | Secondary publication DeepGreen |
| Abstract: | We have investigated the hydrogen storage ability and the effect of hydrogenation on structure and physical properties of Ti/V and their oxides-based thin films. A series of Ti–TiO₂ and VOx–TiO₂ thin films with different layer structures, geometries and thicknesses have been prepared by the sputtering technique on different (Si(111), SiO₂, C) substrates. For the Ti–TiO₂–Ti films up to 50 at.% of hydrogen can be stored in the Ti layers, while the hydrogen can penetrate without accumulation through the TiO₂ layer. A large hydrogen storage was also found in some V₂O₅–TiO₂ films. Hydrogen could also remove the preferential orientation in the Ti films and induce a transition of V₂O₅ to VO₂ in the films. |
| Uncontrolled Keywords: | titan oxides, vanadium oxides, multilayers, crystal structure, hydrogen storage |
| Status: | Publisher's Version |
| URN: | urn:nbn:de:tuda-tuprints-203734 |
| Additional Information: | Invited talk at the 7th International Workshop on Advanced Materials Science and Nanotechnology IWAMSN2014, 2-6 November, 2014, Ha Long, Vietnam. |
| Classification DDC: | 500 Science and mathematics > 530 Physics 500 Science and mathematics > 540 Chemistry |
| Divisions: | 11 Department of Materials and Earth Sciences 11 Department of Materials and Earth Sciences > Material Science 11 Department of Materials and Earth Sciences > Material Science > Material Analytics |
| Date Deposited: | 19 Mar 2024 10:10 |
| Last Modified: | 20 Mar 2024 09:38 |
| PPN: | |
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