Jeong, Jaehoon ; Singaraju, Surya Abhishek ; Aghassi‐Hagmann, Jasmin ; Hahn, Horst ; Breitung, Ben (2020)
Adhesive ion‐gel as gate insulator of electrolyte‐gated transistors.
In: ChemElectroChem, 7 (13)
doi: 10.1002/celc.202000305
Article, Bibliographie
This is the latest version of this item.
Abstract
In this study, a facile method to fabricate a cohesive ion‐gel based gate insulator for electrolyte‐gated transistors is introduced. The adhesive and flexible ion‐gel can be laminated easily on the semiconducting channel and electrode manually by hand. The ion‐gel is synthesized by a straightforward technique without complex procedures and shows a remarkable ionic conductivity of 4.8 mS cm⁻¹ at room temperature. When used as a gate insulator in electrolyte‐gated transistors (EGTs), an on/off current ratio of 2.24×10⁴ and a subthreshold swing of 117 mV dec⁻¹ can be achieved. This performance is roughly equivalent to that of ink drop‐casted ion‐gels in electrolyte‐gated transistors, indicating that the film‐attachment method might represent a valuable alternative to ink drop‐casting for the fabrication of gate insulators.
| Item Type: | Article |
|---|---|
| Erschienen: | 2020 |
| Creators: | Jeong, Jaehoon ; Singaraju, Surya Abhishek ; Aghassi‐Hagmann, Jasmin ; Hahn, Horst ; Breitung, Ben |
| Type of entry: | Bibliographie |
| Title: | Adhesive ion‐gel as gate insulator of electrolyte‐gated transistors |
| Language: | English |
| Date: | 2020 |
| Place of Publication: | Weinheim |
| Publisher: | Wiley-VCH |
| Journal or Publication Title: | ChemElectroChem |
| Volume of the journal: | 7 |
| Issue Number: | 13 |
| DOI: | 10.1002/celc.202000305 |
| Corresponding Links: | |
| Abstract: | In this study, a facile method to fabricate a cohesive ion‐gel based gate insulator for electrolyte‐gated transistors is introduced. The adhesive and flexible ion‐gel can be laminated easily on the semiconducting channel and electrode manually by hand. The ion‐gel is synthesized by a straightforward technique without complex procedures and shows a remarkable ionic conductivity of 4.8 mS cm⁻¹ at room temperature. When used as a gate insulator in electrolyte‐gated transistors (EGTs), an on/off current ratio of 2.24×10⁴ and a subthreshold swing of 117 mV dec⁻¹ can be achieved. This performance is roughly equivalent to that of ink drop‐casted ion‐gels in electrolyte‐gated transistors, indicating that the film‐attachment method might represent a valuable alternative to ink drop‐casting for the fabrication of gate insulators. |
| Uncontrolled Keywords: | adhesive ion gels, electrolyte-gated transistors, ionic liquids, ion gels, printed electronics |
| Classification DDC: | 500 Science and mathematics > 540 Chemistry 600 Technology, medicine, applied sciences > 660 Chemical engineering |
| Divisions: | 11 Department of Materials and Earth Sciences 11 Department of Materials and Earth Sciences > Material Science 11 Department of Materials and Earth Sciences > Material Science > Joint Research Laboratory Nanomaterials |
| Date Deposited: | 24 Jan 2024 07:19 |
| Last Modified: | 24 Jan 2024 07:19 |
| PPN: | |
| Export: | |
| Suche nach Titel in: | TUfind oder in Google |
Available Versions of this Item
-
Adhesive Ion‐Gel as Gate Insulator of Electrolyte‐Gated Transistors. (deposited 23 Jan 2024 13:46)
- Adhesive ion‐gel as gate insulator of electrolyte‐gated transistors. (deposited 24 Jan 2024 07:19) [Currently Displayed]
 |
Send an inquiry |
Options (only for editors)
 |
Show editorial Details |
Drucken
Impressum