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Elemental redistributions at structural defects in Cu(In,Ga)Se₂ thin films for solar cells

Simsek Sanli, Ekin ; Ramasse, Quentin M. ; Sigle, Wilfried ; Abou-Ras, Daniel ; Mainz, Roland ; Weber, A. ; Kleebe, Hans‐Joachim ; Aken, Peter A. van (2022)
Elemental redistributions at structural defects in Cu(In,Ga)Se₂ thin films for solar cells.
In: Journal of Applied Physics, 2016, 120 (20)
doi: 10.26083/tuprints-00020479
Article, Secondary publication, Publisher's Version

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Abstract

The microstructural evolution of Cu(In,Ga)Se₂ absorber layers during a three-stage-type co-evaporation process was studied to elucidate the effect of a Cu-rich stage on the formation of extended structural defects. Defect densities for two Cu-poor samples, one interrupted before and one after this crucial Cu-rich composition stage, were investigated by scanning transmission electron microscopy (STEM) imaging. The structure and chemical nature of individual defects were investigated by aberration-corrected high-resolution STEM in combination with electron energy-loss spectroscopy on the atomic-scale. In spite of the different defect densities between the two samples, most of the individual defects exhibited similar chemistry. In particular, the elemental distributions of atomic columns at {112} twin planes, which are very frequent in Cu(In,Ga)Se₂ thin films, were found to be the same as in the defect-free grain interiors. In contrast, within grain boundaries, dislocation cores, and other structurally more complex defects, elemental redistributions of Cu and In were observed.

Item Type: Article
Erschienen: 2022
Creators: Simsek Sanli, Ekin ; Ramasse, Quentin M. ; Sigle, Wilfried ; Abou-Ras, Daniel ; Mainz, Roland ; Weber, A. ; Kleebe, Hans‐Joachim ; Aken, Peter A. van
Type of entry: Secondary publication
Title: Elemental redistributions at structural defects in Cu(In,Ga)Se₂ thin films for solar cells
Language: English
Date: 2022
Year of primary publication: 2016
Publisher: AIP Publishing
Journal or Publication Title: Journal of Applied Physics
Volume of the journal: 120
Issue Number: 20
Collation: 7 Seiten
DOI: 10.26083/tuprints-00020479
URL / URN: https://tuprints.ulb.tu-darmstadt.de/20479
Corresponding Links:
Origin: Secondary publication service
Abstract:

The microstructural evolution of Cu(In,Ga)Se₂ absorber layers during a three-stage-type co-evaporation process was studied to elucidate the effect of a Cu-rich stage on the formation of extended structural defects. Defect densities for two Cu-poor samples, one interrupted before and one after this crucial Cu-rich composition stage, were investigated by scanning transmission electron microscopy (STEM) imaging. The structure and chemical nature of individual defects were investigated by aberration-corrected high-resolution STEM in combination with electron energy-loss spectroscopy on the atomic-scale. In spite of the different defect densities between the two samples, most of the individual defects exhibited similar chemistry. In particular, the elemental distributions of atomic columns at {112} twin planes, which are very frequent in Cu(In,Ga)Se₂ thin films, were found to be the same as in the defect-free grain interiors. In contrast, within grain boundaries, dislocation cores, and other structurally more complex defects, elemental redistributions of Cu and In were observed.

Status: Publisher's Version
URN: urn:nbn:de:tuda-tuprints-204797
Classification DDC: 500 Science and mathematics > 550 Earth sciences and geology
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Earth Science
11 Department of Materials and Earth Sciences > Earth Science > Geo-Material-Science
Date Deposited: 16 Feb 2022 13:06
Last Modified: 17 Feb 2022 06:01
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