Miao, Jianmin ; Tiginyanu, ; Hartnagel, (1997)
The characteristics of high-resistance layers produced in n-GaAs using MeV-nitrogen implantation for three-dimensional structuring.
In: Applied physics letters. 70 (1997), No. 7
Article
| Item Type: | Article |
|---|---|
| Erschienen: | 1997 |
| Creators: | Miao, Jianmin ; Tiginyanu, ; Hartnagel, |
| Type of entry: | Bibliographie |
| Title: | The characteristics of high-resistance layers produced in n-GaAs using MeV-nitrogen implantation for three-dimensional structuring |
| Language: | English |
| Date: | 1 January 1997 |
| Journal or Publication Title: | Applied physics letters. 70 (1997), No. 7 |
| Divisions: | 18 Department of Electrical Engineering and Information Technology 18 Department of Electrical Engineering and Information Technology > Microwave Electronics |
| Date Deposited: | 19 Nov 2008 15:55 |
| Last Modified: | 20 Feb 2020 13:30 |
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