TU Darmstadt / ULB / TUbiblio

The characteristics of high-resistance layers produced in n-GaAs using MeV-nitrogen implantation for three-dimensional structuring

Miao, Jianmin ; Tiginyanu, ; Hartnagel, (1997)
The characteristics of high-resistance layers produced in n-GaAs using MeV-nitrogen implantation for three-dimensional structuring.
In: Applied physics letters. 70 (1997), No. 7
Article

Item Type: Article
Erschienen: 1997
Creators: Miao, Jianmin ; Tiginyanu, ; Hartnagel,
Type of entry: Bibliographie
Title: The characteristics of high-resistance layers produced in n-GaAs using MeV-nitrogen implantation for three-dimensional structuring
Language: English
Date: 1 January 1997
Journal or Publication Title: Applied physics letters. 70 (1997), No. 7
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Microwave Electronics
Date Deposited: 19 Nov 2008 15:55
Last Modified: 20 Feb 2020 13:30
PPN:
Export:
Suche nach Titel in: TUfind oder in Google
Send an inquiry Send an inquiry

Options (only for editors)
Show editorial Details Show editorial Details