Yadav, Rahul ; Regensburger, Stefan ; Penirschke, Andreas ; Preu, Sascha (2020)
Optimization of GaAs Based Field Effect Transistors for THz Detection at Particle Accelerators.
9th International Beam Instrumentation Conference (IBIC 2020). virtual Conference (14.-18.09.2020)
Conference or Workshop Item, Bibliographie
Abstract
For pump probe experiments employing a free-electron laser and a near infrared (NIR) laser, there is no natural locking between the two. Therefore only the repetition rate of the two lasers can be synchronized leading to jitter and drift on the picosecond scale. GaAs-based field-effect transis- tors (FETs) allow for simultaneous detection of the amplitude and timing of picosecond-scale THz and NIR pulses. They cover the whole THz band and beyond up to the MIR (0.1 - 22 THz) with the exception of the GaAs Reststrahlen band. Large-area FETs feature a high damage threshold (>65 kW) and large linearity range. Antenna-coupled FETs show a noise equiv- alent power (NEP) of 250 pW/pHz at 600 GHz. FET based THz detectors can be used both for THz beam on a single pulse level, as well as for the beam diagnosis. For further optimization of the detector for the needs of beam diagnosis with low incident intensity, a more precise modeling of the FET is developed. Therefore, the incoupling of THz to the rectify- ing element is investigated. The S-Parameters of the 2DEG are measured with on-wafer probes up to 67 GHz and de-embedded with on-wafer TRL calibration.
| Item Type: | Conference or Workshop Item |
|---|---|
| Erschienen: | 2020 |
| Creators: | Yadav, Rahul ; Regensburger, Stefan ; Penirschke, Andreas ; Preu, Sascha |
| Type of entry: | Bibliographie |
| Title: | Optimization of GaAs Based Field Effect Transistors for THz Detection at Particle Accelerators |
| Language: | English |
| Date: | 2020 |
| Event Title: | 9th International Beam Instrumentation Conference (IBIC 2020) |
| Event Location: | virtual Conference |
| Event Dates: | 14.-18.09.2020 |
| URL / URN: | http://accelconf.web.cern.ch/ibic2020/posters/wepp23_poster.... |
| Abstract: | For pump probe experiments employing a free-electron laser and a near infrared (NIR) laser, there is no natural locking between the two. Therefore only the repetition rate of the two lasers can be synchronized leading to jitter and drift on the picosecond scale. GaAs-based field-effect transis- tors (FETs) allow for simultaneous detection of the amplitude and timing of picosecond-scale THz and NIR pulses. They cover the whole THz band and beyond up to the MIR (0.1 - 22 THz) with the exception of the GaAs Reststrahlen band. Large-area FETs feature a high damage threshold (>65 kW) and large linearity range. Antenna-coupled FETs show a noise equiv- alent power (NEP) of 250 pW/pHz at 600 GHz. FET based THz detectors can be used both for THz beam on a single pulse level, as well as for the beam diagnosis. For further optimization of the detector for the needs of beam diagnosis with low incident intensity, a more precise modeling of the FET is developed. Therefore, the incoupling of THz to the rectify- ing element is investigated. The S-Parameters of the 2DEG are measured with on-wafer probes up to 67 GHz and de-embedded with on-wafer TRL calibration. |
| Divisions: | 18 Department of Electrical Engineering and Information Technology 18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics (IMP) 18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics (IMP) > Terahertz Devices and Systems 18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics (IMP) > Terahertz Systems Technology |
| Date Deposited: | 05 Mar 2021 07:41 |
| Last Modified: | 04 Jan 2022 13:03 |
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