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Graphene Field-Effect Transistors Employing Different Thin Oxide Films: A Comparative Study

Giambra, Marco A. and Benfante, Antonio and Pernice, Riccardo and Miseikis, Vaidotas and Fabbri, Filippo and Reitz, Christian and Pernice, Wolfram H. P. and Krupke, Ralph and Calandra, Enrico and Stivala, Salvatore and Busacca, Alessandro C. and Danneau, Romain (2019):
Graphene Field-Effect Transistors Employing Different Thin Oxide Films: A Comparative Study.
In: ACS Omega, 4 (1), pp. 2256-2260. American Chemical Society, ISSN 2470-1343,
DOI: 10.1021/acsomega.8b02836,
[Article]

Abstract

In this work, we report on a comparison among graphene field-effect transistors (GFETs) employing different dielectrics as gate layers to evaluate their microwave response. In particular, aluminum oxide (Al_2O_3), titanium oxide (TiO_2), and hafnium oxide (HfO_2) have been tested. GFETs have been fabricated on a single chip and a statistical analysis has been performed on a set of 24 devices for each type of oxide. Direct current and microwave measurements have been carried out on such GFETs and short circuit current gain and maximum available gain have been chosen as quality factors to evaluate their microwave performance. Our results show that all of the devices belonging to a specific group (i.e., with the same oxide) have a well-defined performance curve and that the choice of hafnium oxide represents the best trade-off in terms of dielectric properties. Graphene transistors employing HfO2 as the dielectric layer, in fact, exhibit the best performance in terms of both the cutoff frequency and the maximum frequency of oscillation.

Item Type: Article
Erschienen: 2019
Creators: Giambra, Marco A. and Benfante, Antonio and Pernice, Riccardo and Miseikis, Vaidotas and Fabbri, Filippo and Reitz, Christian and Pernice, Wolfram H. P. and Krupke, Ralph and Calandra, Enrico and Stivala, Salvatore and Busacca, Alessandro C. and Danneau, Romain
Title: Graphene Field-Effect Transistors Employing Different Thin Oxide Films: A Comparative Study
Language: English
Abstract:

In this work, we report on a comparison among graphene field-effect transistors (GFETs) employing different dielectrics as gate layers to evaluate their microwave response. In particular, aluminum oxide (Al_2O_3), titanium oxide (TiO_2), and hafnium oxide (HfO_2) have been tested. GFETs have been fabricated on a single chip and a statistical analysis has been performed on a set of 24 devices for each type of oxide. Direct current and microwave measurements have been carried out on such GFETs and short circuit current gain and maximum available gain have been chosen as quality factors to evaluate their microwave performance. Our results show that all of the devices belonging to a specific group (i.e., with the same oxide) have a well-defined performance curve and that the choice of hafnium oxide represents the best trade-off in terms of dielectric properties. Graphene transistors employing HfO2 as the dielectric layer, in fact, exhibit the best performance in terms of both the cutoff frequency and the maximum frequency of oscillation.

Journal or Publication Title: ACS Omega
Journal volume: 4
Number: 1
Publisher: American Chemical Society
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Fachgebiet Molekulare Nanostrukturen
Date Deposited: 20 Nov 2020 12:01
DOI: 10.1021/acsomega.8b02836
Official URL: https://pubs.acs.org/doi/10.1021/acsomega.8b02836
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