Preis, S. ; Wiens, A. ; Lia, E. ; Heinrich, W. ; Jakoby, R. ; Maune, H. ; Bengtsson, O. (2018)
A High-Efficiency GaN Transistor Module with Thick-Film BST-Based Tunable Matching Network.
2018 48th European Microwave Conference (EuMC).
doi: 10.23919/EuMC.2018.8541808
Conference or Workshop Item, Bibliographie
| Item Type: | Conference or Workshop Item |
|---|---|
| Erschienen: | 2018 |
| Creators: | Preis, S. ; Wiens, A. ; Lia, E. ; Heinrich, W. ; Jakoby, R. ; Maune, H. ; Bengtsson, O. |
| Type of entry: | Bibliographie |
| Title: | A High-Efficiency GaN Transistor Module with Thick-Film BST-Based Tunable Matching Network |
| Language: | English |
| Date: | September 2018 |
| Event Title: | 2018 48th European Microwave Conference (EuMC) |
| DOI: | 10.23919/EuMC.2018.8541808 |
| Uncontrolled Keywords: | barium compounds;code division multiple access;gallium compounds;high electron mobility transistors;III-V semiconductors;Long Term Evolution;strontium compounds;UHF power amplifiers;varactors;wide band gap semiconductors;robust tunable devices;frequency agility;power amplifier;high-efficiency GaN transistor module;GaN HEMT;tunable matching network;thick-film BST;thick-film barium-strontium-titanate varactors package;LTE measurements;WCDMA measurements;temperature 20.0 degC to 80.0 degC;frequency 1.5 GHz to 2.45 GHz;GaN;(BaSr)TiO3;Varactors;Temperature measurement;Aluminum oxide;Substrates;Transistors;Thermal conductivity;Conductivity;Barium-Strontium-Titanate (BST);Ferroelectric films;Gallium nitride (GaN);HEMTs;Power amplifiers;Power transistors;Tunable circuits;Varactors |
| Divisions: | 18 Department of Electrical Engineering and Information Technology 18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics (IMP) > Microwave Engineering 18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics (IMP) |
| Date Deposited: | 05 Feb 2019 13:10 |
| Last Modified: | 05 Feb 2019 13:10 |
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