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Load Tuning Assisted Discrete-Level Supply Modulation Using BST and GaN Devices for Highly Efficient Power Amplifiers

Preis, S. ; Wolff, N. ; Lenze, F. ; Wiens, A. ; Jakoby, R. ; Heinrich, W. ; Bengtsson, O. (2018)
Load Tuning Assisted Discrete-Level Supply Modulation Using BST and GaN Devices for Highly Efficient Power Amplifiers.
2018 IEEE/MTT-S International Microwave Symposium - IMS.
doi: 10.1109/MWSYM.2018.8439135
Conference or Workshop Item, Bibliographie

Item Type: Conference or Workshop Item
Erschienen: 2018
Creators: Preis, S. ; Wolff, N. ; Lenze, F. ; Wiens, A. ; Jakoby, R. ; Heinrich, W. ; Bengtsson, O.
Type of entry: Bibliographie
Title: Load Tuning Assisted Discrete-Level Supply Modulation Using BST and GaN Devices for Highly Efficient Power Amplifiers
Language: English
Date: June 2018
Event Title: 2018 IEEE/MTT-S International Microwave Symposium - IMS
DOI: 10.1109/MWSYM.2018.8439135
Uncontrolled Keywords: Modulation;Varactors;Tuning;Transistors;Gallium nitride;Peak to average power ratio;Power amplifiers;Gallium nitride;HEMTs;load modulation;power amplifiers;supply modulation;varactors
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics (IMP) > Microwave Engineering
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics (IMP)
Date Deposited: 06 Feb 2019 11:01
Last Modified: 06 Feb 2019 11:01
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