Ahles, Marcus ; Schmechel, Roland ; Seggern, Heinz von (2004):
N-type organic field-effect transistor based on interface doped pentacene.
In: Applied Physics Letters, 85 (19), pp. 4499-4501. American Institute of Physics Publishing, ISSN 0003-6951 ,
[Article]
Abstract
The realization of an n-type pentacene field-effect transistor based on interface-doped pentacene is demonstrated, laying a headstone for an organic complementary-metal–oxide–semiconductor technology. The doping is performed by depositing traces of calcium onto the gate insulator before applying the organic semiconductor. Electron field-effect mobilities of 0.19 cm2 V−1 s−1 are achieved. The field effect, i.e., the electron accumulation behavior, is studied by impedance spectroscopy and charge measurements on a metal–insulator–semiconductor (MIS) diode. A good correlation between the physical properties of the transistor and the MIS diode can be reported. A temporal dynamics and a hysteresislike accumulation behavior are observed, both explainable by the influence of deep electron traps.
| Item Type: | Article |
|---|---|
| Erschienen: | 2004 |
| Creators: | Ahles, Marcus ; Schmechel, Roland ; Seggern, Heinz von |
| Title: | N-type organic field-effect transistor based on interface doped pentacene |
| Language: | English |
| Abstract: | The realization of an n-type pentacene field-effect transistor based on interface-doped pentacene is demonstrated, laying a headstone for an organic complementary-metal–oxide–semiconductor technology. The doping is performed by depositing traces of calcium onto the gate insulator before applying the organic semiconductor. Electron field-effect mobilities of 0.19 cm2 V−1 s−1 are achieved. The field effect, i.e., the electron accumulation behavior, is studied by impedance spectroscopy and charge measurements on a metal–insulator–semiconductor (MIS) diode. A good correlation between the physical properties of the transistor and the MIS diode can be reported. A temporal dynamics and a hysteresislike accumulation behavior are observed, both explainable by the influence of deep electron traps. |
| Journal or Publication Title: | Applied Physics Letters |
| Journal Volume: | 85 |
| Issue Number: | 19 |
| Publisher: | American Institute of Physics Publishing |
| Uncontrolled Keywords: | organic semiconductors, MOSFET, electron mobility, electron traps, calcium, silicon, silicon compounds, elemental semiconductors |
| Divisions: | 11 Department of Materials and Earth Sciences 11 Department of Materials and Earth Sciences > Material Science 11 Department of Materials and Earth Sciences > Material Science > Electronic Materials |
| Date Deposited: | 19 Nov 2008 16:20 |
| URL / URN: | http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filety... |
| License: | [undefiniert] |
| Funders: | The authors gratefully acknowledge the funding of the DFG in the framework of the OFET Schwerpunkt Programm ( Schm 1523/3 ) and the project SE 941/2. |
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