| Item Type: |
Article
|
| Erschienen: |
1998 |
| Creators: |
Vogt, Alexander ; Simon, A. ; Hartnagel, H. L. ; Schikora, J. ; Buschmann, V. ; Rodewald, M. ; Fuess, H. ; Fascko, S. ; Koerdt, C. ; Kurz, H. |
| Type of entry: |
Bibliographie |
| Title: |
Ohmic contact formation mechanics of the PdGeAu system on n-type GaSb grown by molecular beam epitaxy |
| Language: |
English |
| Date: |
1998 |
| Publisher: |
American Institute of Physics |
| Journal or Publication Title: |
Journal of Applied Physics |
| Volume of the journal: |
83 |
| Issue Number: |
12 |
| Divisions: |
18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Microwave Electronics |
| Date Deposited: |
19 Nov 2008 16:20 |
| Last Modified: |
20 Feb 2020 13:30 |
| PPN: |
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| Export: |
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