Prasad, Ravi Mohan ; Lauterbach, Stefan ; Kleebe, Hans-Joachim ; Merdrignac-Conanec, Odile ; Barsan, Nicolae ; Weimar, Udo ; Gurlo, Aleksander (2017)
Response of Gallium Nitride Chemiresistors to Carbon Monoxide is Due to Oxygen Contamination.
In: ACS Sensors, 2 (6)
doi: 10.1021/acssensors.7b00064
Article, Bibliographie
Abstract
We report on the influence of oxygen impurities on the gas sensing properties of gallium nitride (GaN) chemiresistors. As shown by XRD, elemental analysis, and TEM characterization, surface oxidation of GaN for example, upon contact to ambient air atmosphere creates an oxidative amorphous layer which provides the sites for the sensing toward CO. Treating this powder under dry ammonia at 800 degrees C converts the oxide layer in nitride, and consequently the sensing performance toward CO is dramatically reduced for ammonia treated GaN gas sensors. Hence the response of GaN sensors to CO is caused by oxygen in the form of amorphous surface oxide or oxynitride.
| Item Type: | Article |
|---|---|
| Erschienen: | 2017 |
| Creators: | Prasad, Ravi Mohan ; Lauterbach, Stefan ; Kleebe, Hans-Joachim ; Merdrignac-Conanec, Odile ; Barsan, Nicolae ; Weimar, Udo ; Gurlo, Aleksander |
| Type of entry: | Bibliographie |
| Title: | Response of Gallium Nitride Chemiresistors to Carbon Monoxide is Due to Oxygen Contamination |
| Language: | English |
| Date: | June 2017 |
| Publisher: | American Chemical Society |
| Journal or Publication Title: | ACS Sensors |
| Volume of the journal: | 2 |
| Issue Number: | 6 |
| DOI: | 10.1021/acssensors.7b00064 |
| URL / URN: | https://pubs.acs.org/doi/10.1021/acssensors.7b00064 |
| Abstract: | We report on the influence of oxygen impurities on the gas sensing properties of gallium nitride (GaN) chemiresistors. As shown by XRD, elemental analysis, and TEM characterization, surface oxidation of GaN for example, upon contact to ambient air atmosphere creates an oxidative amorphous layer which provides the sites for the sensing toward CO. Treating this powder under dry ammonia at 800 degrees C converts the oxide layer in nitride, and consequently the sensing performance toward CO is dramatically reduced for ammonia treated GaN gas sensors. Hence the response of GaN sensors to CO is caused by oxygen in the form of amorphous surface oxide or oxynitride. |
| Uncontrolled Keywords: | Chemiresistors, gallium nitride, carbon monoxide, oxygen, gallium oxide, gas sensors, in-situ, films, powders |
| Divisions: | 11 Department of Materials and Earth Sciences 11 Department of Materials and Earth Sciences > Earth Science 11 Department of Materials and Earth Sciences > Earth Science > Geo-Material-Science 11 Department of Materials and Earth Sciences > Material Science 11 Department of Materials and Earth Sciences > Material Science > Dispersive Solids |
| Date Deposited: | 22 Aug 2018 09:39 |
| Last Modified: | 16 Aug 2021 12:33 |
| PPN: | |
| Funders: | priority program "Adapting surfaces for high temperature applications" of German Research Foundation (DFG): Gu 992/3-2, SPP 1299 |
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