Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2018)
Reconfigurable electrostatically doped 2.5-gate planar field-effect transistors for dopant-free CMOS.
Taormina, Sizilien (9-12 April 2018)
doi: 10.1109/DTIS.2018.8368567
Conference or Workshop Item, Bibliographie
Abstract
In this paper, we demonstrate by extending TCAD simulations based on experimental data of fabricated electrostatically doped, reconfigurable planar double-gate field-effect transistors, the improved characteristics of a triple gate device design. The technological cornerstones for this general-purpose FET comprise mid-gap Schottky S/D junctions on a silicon-on-insulator substrate. The transistor type, i.e. n-type or p-type, is interchangeable during operation by applying a control-gate voltage which significantly increases the flexibility and versatility in the design of integrated circuits.
| Item Type: | Conference or Workshop Item |
|---|---|
| Erschienen: | 2018 |
| Creators: | Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo |
| Type of entry: | Bibliographie |
| Title: | Reconfigurable electrostatically doped 2.5-gate planar field-effect transistors for dopant-free CMOS |
| Language: | English |
| Date: | 31 May 2018 |
| Book Title: | 13th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS) |
| Event Location: | Taormina, Sizilien |
| Event Dates: | 9-12 April 2018 |
| DOI: | 10.1109/DTIS.2018.8368567 |
| URL / URN: | https://doi.org/10.1109/DTIS.2018.8368567 |
| Abstract: | In this paper, we demonstrate by extending TCAD simulations based on experimental data of fabricated electrostatically doped, reconfigurable planar double-gate field-effect transistors, the improved characteristics of a triple gate device design. The technological cornerstones for this general-purpose FET comprise mid-gap Schottky S/D junctions on a silicon-on-insulator substrate. The transistor type, i.e. n-type or p-type, is interchangeable during operation by applying a control-gate voltage which significantly increases the flexibility and versatility in the design of integrated circuits. |
| Divisions: | 18 Department of Electrical Engineering and Information Technology 18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics |
| Date Deposited: | 07 Jun 2018 14:17 |
| Last Modified: | 07 Jun 2018 14:17 |
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