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Jump to: German | English
Number of items: 8.

German

Zaunert, Florian (2009):
Simulation und vergleichende elektrische Bewertung von planaren und 3D-MOS-Strukturen mit high-k Gate-Dielektrika.
Darmstadt, Deutschland, Darmstädter Dissertationen, Institut für Halbleitertechnik und Nanoelektronik, [Online-Edition: urn:nbn:de:tuda-tuprints-19784],
[Ph.D. Thesis]

English

Endres, Ralf and Stefanov, Yordan and Wessely, Frank and Zaunert, Florian and Schwalke, Udo (2008):
Process Damage-free Damascene Metal Gate Technology for Gentle Integration of Epitaxially Grown High-K.
In: Microelectronic Engineering, pp. 15-19, 85, (1), [Online-Edition: http://dx.doi.org/10.1016/j.mee.2007.03.008],
[Article]

Zaunert, Florian and Endres, Ralf and Schwalke, Udo (2007):
Device and Stress Simulation of MOSFETs with Crystalline High-k Gate-Dielectrics Manufactured with Replacement Gate Process.
In: Proceedings of Semiconductor Advances for Future Electronics (SAFE) 2007, pp. 488-491, [Online-Edition: http://www.stw.nl/NR/rdonlyres/298C269E-5F75-46AC-875E-ACF93...],
[Article]

Zaunert, Florian and Endres, Ralf and Stefanov, Yordan and Schwalke, Udo (2007):
Evaluation of MOSFETs with Crystalline High-K Gate-Dielectrics: Device Simulation and Experimental Data.
In: Journal of Telecommunications and Technology, pp. 78-85, 2, [Online-Edition: http://www.nit.eu/czasopisma/JTIT/2007/2/78.pdf],
[Article]

Endres, Ralf and Stefanov, Yordan and Wessely, Frank and Zaunert, Florian and Schwalke, Udo (2006):
Process Damage-Free Damascene Metal Gate Technology for Gentle Integration of Epitaxially Grown High-K Gate Dielectrics.
In: 3rd International Symposium on Advanced Gate Stack Technology (ISAGST), Austin, TX, USA, 27.-29.09.2006, [Conference or Workshop Item]

Zaunert, Florian and Endres, Ralf and Stefanov, Yordan and Schwalke, Udo (2006):
Evaluation of MOSFETs with Crystalline High-k Gate-dielectrics: Device Simulation and Experimental Data.
In: 7th Symposium Diagnostics & Yield - Advanced Silicon Devices and Technologies for ULSI Era, Warschau, Polen, 25.-28.06.2006, [Conference or Workshop Item]

Gottlob, H. D. B. and Lemme, M. C. and Mollenhauer, T. and Wahlbrink, T. and Efavi, J. K. and Kurz, H. and Stefanov, Yordan and Haberle, Klaus and Komaragiri, Rama Subrahmanyam and Ruland, Tino and Zaunert, Florian and Schwalke, Udo (2005):
Introduction of Crystalline High-k Gate Dielectrics in a CMOS Process.
In: Journal of Non-Crystalline Solids, pp. 1885-1889, 351, (21-23), [Online-Edition: http://dx.doi.org/10.1016/j.jnoncrysol.2005.04.032],
[Article]

Komaragiri, Rama Subrahmanyam and Zaunert, Florian and Schwalke, Udo (2004):
Gate Engineering for High-K Dielectric and Ultra-thin Gate Oxide CMOS.
In: 11th Annual Workshop on Semiconductor Advances for Future Electronics (SAFE), Veldhoven, Niederlande, 24.-25.11.2004, [Conference or Workshop Item]

This list was generated on Tue Nov 12 02:22:42 2019 CET.