Artikel

Petzold, Stefan ; Piros, Eszter ; Sharath, Sankaramangalam Ulhas ; Zintler, Alexander ; Hildebrandt, Erwin ; Molina-Luna, Leopoldo ; Wenger, Christian ; Alff, Lambert (2021)
Gradual reset and set characteristics in yttrium oxide based resistive random access memory.
In: Semiconductor Science and Technology, 2021, 34 (7)
doi: 10.26083/tuprints-00019328
Artikel, Zweitveröffentlichung, Verlagsversion

Piros, Eszter ; Lonsky, Martin ; Petzold, Stefan ; Zintler, Alexander ; Sharath, S.U. ; Vogel, Tobias ; Kaiser, Nico ; Eilhardt, Robert ; Molina-Luna, Leopoldo ; Wenger, Christian ; Müller, Jens ; Alff, Lambert (2020)
Role of Oxygen Defects in Conductive-Filament Formation in Y2O3 -Based Analog RRAM Devices as Revealed by Fluctuation Spectroscopy.
In: Physical Review Applied, 14 (3)
doi: 10.1103/PhysRevApplied.14.034029
Artikel, Bibliographie

Petzold, Stefan ; Piros, Eszter ; Eilhardt, Robert ; Zintler, Alexander ; Vogel, Tobias ; Kaiser, Nico ; Radetinac, Aldin ; Komissinskiy, Philipp ; Jalaguier, Eric ; Nolot, Emmanuel ; Charpin-Nicolle, Christelle ; Wenger, Christian ; Molina-Luna, Leopoldo ; Miranda, Enrique ; Alff, Lambert (2020)
Tailoring the Switching Dynamics in Yttrium Oxide-Based RRAM Devices by Oxygen Engineering: From Digital to Multi-Level Quantization toward Analog Switching.
In: Advanced Electronic Materials, 2020
doi: 10.1002/aelm.202000439
Artikel, Bibliographie

Petzold, Stefan ; Piros, Eszter ; Eilhardt, Robert ; Zintler, Alexander ; Vogel, Tobias ; Kaiser, Nico ; Radetinac, Aldin ; Komissinskiy, Philipp ; Jalaguier, Eric ; Nolot, Emmanuel ; Charpin-Nicolle, Christelle ; Wenger, Christian ; Molina-Luna, Leopoldo ; Miranda, Enrique ; Alff, Lambert (2020)
Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switching.
In: Advanced Electronic Materials, 6 (11)
doi: 10.1002/aelm.202000439
Artikel, Bibliographie

Piros, Eszter ; Petzold, Stefan ; Zintler, Alexander ; Kaiser, Nico ; Vogel, Tobias ; Eilhardt, Robert ; Wenger, Christian ; Molina-Luna, Leopoldo ; Alff, Lambert (2020)
Enhanced thermal stability of yttrium oxide-based RRAM devices with inhomogeneous Schottky-barrier.
In: Applied Physics Letters, 117 (1)
doi: 10.1063/5.0009645
Artikel, Bibliographie

Piros, Eszter ; Lonsky, Martin ; Petzold, Martin ; Zintler, Alexander ; Sharath, S.U. ; Vogel, Tobias ; Kaiser, Nico ; Eilhardt, Robert ; Molina-Luna, Leopoldo ; Wenger, Christian ; Müller, Jens ; Alff, Lambert (2020)
Role of oxygen defects in forming conductive filaments in Y2O3-based analog RRAM devices as revealed by fluctuation spectroscopy.
In: Physical Review Applied
Artikel, Bibliographie

Niu, Gang ; Calka, Pauline ; Huang, Peng ; Sharath, Sankaramangalam Ulhas ; Petzold, Stefan ; Gloskovskii, Andrei ; Fröhlich, Karol ; Zhao, Yudi ; Kang, Jinfeng ; Schubert, Markus Andreas ; Bärwolf, Florian ; Ren, Wei ; Ye, Zuo-Guang ; Perez, Eduardo ; Wenger, Christian ; Alff, Lambert ; Schroeder, Thomas (2019)
Operando diagnostic detection of interfacial oxygen ‘breathing’ of resistive random access memory by bulk-sensitive hard X-ray photoelectron spectroscopy.
In: Materials Research Letters, 7 (3)
doi: 10.1080/21663831.2018.1561535
Artikel, Bibliographie

Sharath, Sankaramangalam Ulhas ; Vogel, Stefan ; Molina-Luna, Leopoldo ; Hildebrandt, Erwin ; Wenger, Christian ; Kurian, Jose ; Dürrschnabel, Michael ; Niermann, Tore ; Niu, Gang ; Calka, Pauline ; Lehmann, Michael ; Kleebe, Hans-Joachim ; Schroeder, Thomas ; Alff, Lambert (2017)
Control of Switching Modes and Conductance Quantization in Oxygen Engineered HfOx based Memristive Devices.
In: Advanced Functional Materials, 27 (32)
doi: 10.1002/adfm.201700432
Artikel, Bibliographie

Niu, Gang ; Calka, Pauline ; Auf der Maur, Matthias ; Santoni, Francesco ; Guha, Subhajit ; Fraschke, Mirko ; Hamoumou, Philippe ; Gautier, Brice ; Perez, Eduardo ; Walczyk, Christian ; Wenger, Christian ; Di Carlo, Aldo ; Alff, Lambert ; Schroeder, Thomas (2016)
Geometric conductive filament confinement by nanotips for resistive switching of HfO2-RRAM devices with high performance.
In: Scientific Reports, 6
doi: 10.1038/srep25757
Artikel, Bibliographie