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Number of items: 14.

German

Yilmazoglu, Oktay and Pavlidis, Dimitris and Litvin, Yu. M. and Hubbard, S. M. and Tiginyanu, I. and Mutamba, Kabula and Hartnagel, Hans L. and Litovchenko, V. G. and Evtukh, A. A. (2002):
Field emission from quantum size GaN whiskers.
In: International Vacuum Microelectronics Conference <15, 2002, Lyon>: Proceedings ... IVMC 2002.- Lyon, 2002.- QB3.07, [Conference or Workshop Item]

Tiginyanu, I. and Kravetsky, I. V. and Monecke, J. and Cordts, W. and Marowsky, G. and Hartnagel, H. L. (2000):
Semiconductor sieves as nonlinear optical materials.
In: Applied physics letters, pp. S. 2415-2417, 77, [Article]

Sigmund, Jochen and Saglam, M. and Cojocari, O. and Tiginyanu, I. and Hartnagel, H. L. (2000):
Untersuchungen von epitaktischem Überwachsen auf porösen GaP und n-GaAs Substraten.
In: Epitaxie von III/V-Halbleitern: 15. Workshop des DGKK-Arbeitskreises , 2000 Bad Dürkheim. Tagungsbd., [Conference or Workshop Item]

Tiginyanu, I. and Ichizli, Victoria M. and Hartnagel, Hans L. (1996):
Surface vibrational modes in nanoporous III-V compounds.
In: International Conference on Vibrations at Surfaces <8, 1996, Birmingham>: Proceedings, [Conference or Workshop Item]

English

Tiginyanu, I. and Kravetsky, I. V. and Marowsky, G. and Monecke, J. and Hartnagel, H. L. (2000):
Design of new nonlinear optical materials based on porous III-V compounds.
In: Physica statis solidi, pp. S. 557-560, b 221, [Article]

Tiginyanu, I. and Langa, S. and Hjort, K. and Monecke, J. and Hartnagel, H. L. (2000):
Nanotexturization of III-V compounds for THz-wave generation.
Berlin (u.a.), VDE-Verl., In: THz Conference 2000: 8th International Conference on Terahertz Electronics, 2000 Darmstadt Techn. Univ., Inst. für Hochfrequenztechnik. - Berlin (u.a.): VDE-Verl., 2000. Abstract Booklet, S. 275, [Conference or Workshop Item]

Tiginyanu, I. and Kravetsky, I. and Pavlidis, D. and Eisenbach, A. and Hildebrandt, R. and Marowsky, G. and Hartnagel, H. L. (2000):
Nonlinear optical characterization of GaN layers grown by MOCVD on sapphire.
In: MRS Internet journal nitride semiconductor research. 5S1, W11.52 (2000), [Article]

Tiginyanu, I. and Schwab, C. and Sarua, A. and Irmer, G. and Monecke, J. and Sigmund, J. and Hartnagel, H. L. (2000):
Optical characteristics of nanostructured III-V compounds.
Dordrecht (u.a.), Kluwer Acad. Publ., In: NATO Advanced Research Workshop on Frontiers of Nano-Optoelectronic Systems: Molecular Scale Engineering and Processes <2000, Kiev>: Proceedings. - Dordrecht (u.a.): Kluwer Acad. Publ., 2000, [Conference or Workshop Item]

Tiginyanu, I. and Kravetsky, I. V. and Marowsky, G. and Monecke, J. and Cordts, W. and Hartnagel, H. L. (2000):
Semiconductor sieves as novel materials for nonlinear optical applications.
In: Materials Research Society: Fall Meeting <2000, Boston, Mass.>. Abstract Booklet; Report ES.13, [Conference or Workshop Item]

Tiginyanu, I. and Ursaki, V. V. and Raptis, Y. S. and Stergiou, V. and Anatassakis, E. and Hartnagel, H. L. and Vogt, Alexander and Prevot, B. and Schwab, C. (1999):
Raman modes in porous GaP under hydrostatic pressure.
In: Physica status solidi, pp. 281-286, 211, [Article]

Tiginyanu, I. and Irmer, G. and Monecke, J. and Hartnagel, H. L. (1997):
MicroRaman scattering study of surface-related phonon modes in porous GaP.
In: Physical review. B 55 (1997), S. 6739-6742, [Article]

Tiginyanu, I. and Irmer, G. and Monecke, J. and Vogt, Alexander and Hartnagel, H. L. (1997):
Porosity-induced modification of the phonon spectrum of n-GaAs.
In: Semiconductor science technology. 12 (1997), S. 491-493, [Article]

Tiginyanu, I. and Pavlidis, D. and Cao, J. and Eisenbach, A. and Ichizli, Victoria M. and Hartnagel, Hans L. and Anedda, A. and Corpino, R. (1997):
Time-resolved photoluminescence characterisation of GaN layers grown by metalorganic chemical vapor deposition.
In: Conference on Defect Recognition and Imaging Processing <7, 1997>: Proceedings, [Conference or Workshop Item]

Tiginyanu, I. and Miao, and Hartnagel, Hans L. and Rück, and Tinschert, and Ursaki, and Ichizli, Victoria M. (1996):
Raman and electrical characterisation of n-InP implanted by 630-keV nitrogen.
In: International Conference on Indium Phosphide and Related Materials <8, 1996, Schwäbisch Gmünd>: Proceedings, [Conference or Workshop Item]

This list was generated on Sat Oct 19 00:50:23 2019 CEST.