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Jump to: 2020 | 2018
Number of items: 4.


Méndez Aller, M. and Nandi, U. and Lu, H. and Norman, J. C. and Gossard, A. C. and Preu, S. (2020):
ErAs Enhanced Active Photonic THz Components.
Duisburg · Nordrhein-Westfalen · Germany, In: 2018 First International Workshop on Mobile Terahertz Systems (IWMTS), pp. 1-4, DOI: 10.25534/tuprints-00011359,
[Online-Edition: https://tuprints.ulb.tu-darmstadt.de/11359],
[Conference or Workshop Item]

Nandi, U. and Faridi, F. R. and Fernandez Olvera, A. d. J. and Norman, J. C. and Lu, H. and Gossard, A. C. and Preu, S. (2020):
High Dynamic Range THz Systems using ErAs:In(Al)GaAs Photoconductors.
Bochum, Germany, In: 2019 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP), pp. 115-117, DOI: 10.25534/tuprints-00011384,
[Online-Edition: https://tuprints.ulb.tu-darmstadt.de/11384],
[Conference or Workshop Item]


Nandi, U. and Norman, J. C. and Gossard, A. C. and Lu, H. and Preu, Sascha (2018):
1550-nm Driven ErAs: In (Al) GaAs Photoconductor-Based Terahertz Time Domain System with 6.5 THz Bandwidth.
In: Journal of Infrared, Millimeter, and Terahertz Waves, 39 (4), Springer US, pp. 340-348, ISSN 1866-6892,
DOI: 10.1007/s10762-018-0471-9,
[Online-Edition: https://link.springer.com/article/10.1007/s10762-018-0471-9],

Nandi, U. and Norman, J. C. and Gossard, A. C. and Lu, H. and Preu, Sascha (2018):
Large Bandwidth TDS System using ErAs:InGaAs photoconductor with highest recorded resistivity and breakdown voltage.
In: International Workshop on Terahertz Technology and Applications, Kaiserslautern, Germany, March 20th/21st 2018, [Conference or Workshop Item]

This list was generated on Tue Mar 31 00:11:47 2020 CEST.