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Piezotronic Tuning of Potential Barriers in ZnO Bicrystals

Keil, Peter and Trapp, Maximilian and Novak, Nikola and Frömling, Till and Kleebe, Hans-Joachim and Rödel, Jürgen (2018):
Piezotronic Tuning of Potential Barriers in ZnO Bicrystals.
In: Advanced Materials, Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim, pp. 1-5, 2018, (1705573), ISSN 09359648, DOI: 10.1002/adma.201705573, [Online-Edition: https://doi.org/10.1002/adma.201705573],
[Article]

Abstract

Coupling of magnetic, ferroelectric, or piezoelectric properties with charge transport at oxide interfaces provides the option to revolutionize classical electronics. Here, the modulation of electrostatic potential barriers at tailored ZnO bicrystal interfaces by stress-induced piezoelectric polarization is reported. Specimen design by epitaxial solid-state transformation allows for both optimal polarization vector alignment and tailoring of defect states at a semiconductor–semiconductor interface. Both quantities are probed by transmission electron microscopy. Consequently, uniaxial compressive stress affords a complete reduction of the potential barrier height at interfaces with head-to-head orientation of the piezoelectric polarization vectors and an increase in potential barrier height at interfaces with tail-to-tail orientation. The magnitude of this coupling between mechanical input and electrical transport opens pathways to the design of multifunctional electronic devices like strain triggered transistors, diodes, and stress sensors with feasible applications for human–computer interfacing.

Item Type: Article
Erschienen: 2018
Creators: Keil, Peter and Trapp, Maximilian and Novak, Nikola and Frömling, Till and Kleebe, Hans-Joachim and Rödel, Jürgen
Title: Piezotronic Tuning of Potential Barriers in ZnO Bicrystals
Language: English
Abstract:

Coupling of magnetic, ferroelectric, or piezoelectric properties with charge transport at oxide interfaces provides the option to revolutionize classical electronics. Here, the modulation of electrostatic potential barriers at tailored ZnO bicrystal interfaces by stress-induced piezoelectric polarization is reported. Specimen design by epitaxial solid-state transformation allows for both optimal polarization vector alignment and tailoring of defect states at a semiconductor–semiconductor interface. Both quantities are probed by transmission electron microscopy. Consequently, uniaxial compressive stress affords a complete reduction of the potential barrier height at interfaces with head-to-head orientation of the piezoelectric polarization vectors and an increase in potential barrier height at interfaces with tail-to-tail orientation. The magnitude of this coupling between mechanical input and electrical transport opens pathways to the design of multifunctional electronic devices like strain triggered transistors, diodes, and stress sensors with feasible applications for human–computer interfacing.

Journal or Publication Title: Advanced Materials
Volume: 2018
Number: 1705573
Publisher: Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim
Divisions: 11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Nonmetallic-Inorganic Materials
11 Department of Materials and Earth Sciences
Date Deposited: 22 Jan 2018 07:47
DOI: 10.1002/adma.201705573
Official URL: https://doi.org/10.1002/adma.201705573
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