Fernandez Olvera, A. D. J. and Lu, H. and Gossard, A. C. and Preu, S. (2017):
Continuous-wave 1550 nm operated terahertz system using ErAs:In(Al)GaAs photo-conductors with 52 dB dynamic range at 1 THz.
In: Opt. Express, 25 (23), OSA, pp. 29492-29500, DOI: 10.1364/OE.25.029492,
[Online-Edition: http://www.tsys.tu-darmstadt.de/Preu_ErAsInGaAs_CW],
[Article]
Abstract
Telecom-wavelength compatible photoconductors benefit strongly from the large amount and affordability of telecom lasers and components but there are demanding requirements on material development. We demonstrate continuous-wave (CW) photomixing with a setup that only uses ErAs:In(Al)GaAs devices with a peak dynamic range (DNR) of 78 dB and a bandwidth of ∼3.65 THz at an integration time of 300 ms and only 26 mW laser power on each device. The ErAs:InGaAs receiver further features a factor of two lower noise equivalent power (NEP) than a state-of-the-art photoconductor, despite an antenna mismatch.
| Item Type: | Article |
|---|---|
| Erschienen: | 2017 |
| Creators: | Fernandez Olvera, A. D. J. and Lu, H. and Gossard, A. C. and Preu, S. |
| Title: | Continuous-wave 1550 nm operated terahertz system using ErAs:In(Al)GaAs photo-conductors with 52 dB dynamic range at 1 THz |
| Language: | English |
| Abstract: | Telecom-wavelength compatible photoconductors benefit strongly from the large amount and affordability of telecom lasers and components but there are demanding requirements on material development. We demonstrate continuous-wave (CW) photomixing with a setup that only uses ErAs:In(Al)GaAs devices with a peak dynamic range (DNR) of 78 dB and a bandwidth of ∼3.65 THz at an integration time of 300 ms and only 26 mW laser power on each device. The ErAs:InGaAs receiver further features a factor of two lower noise equivalent power (NEP) than a state-of-the-art photoconductor, despite an antenna mismatch. |
| Journal or Publication Title: | Opt. Express |
| Volume: | 25 |
| Number: | 23 |
| Publisher: | OSA |
| Uncontrolled Keywords: | Photoconductivity; Photoconductive materials; Detectors; Far infrared or terahertz |
| Divisions: | 18 Department of Electrical Engineering and Information Technology 18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics 18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics > Terahertz Systems Technology |
| Date Deposited: | 05 Dec 2017 12:54 |
| DOI: | 10.1364/OE.25.029492 |
| Official URL: | http://www.tsys.tu-darmstadt.de/Preu_ErAsInGaAs_CW |
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