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Continuous-wave 1550 nm operated terahertz system using ErAs:In(Al)GaAs photo-conductors with 52 dB dynamic range at 1 THz

Fernandez Olvera, A. D. J. and Lu, H. and Gossard, A. C. and Preu, S. (2017):
Continuous-wave 1550 nm operated terahertz system using ErAs:In(Al)GaAs photo-conductors with 52 dB dynamic range at 1 THz.
In: Opt. Express, OSA, pp. 29492-29500, 25, (23), DOI: 10.1364/OE.25.029492,
[Online-Edition: http://www.tsys.tu-darmstadt.de/Preu_ErAsInGaAs_CW],
[Article]

Abstract

Telecom-wavelength compatible photoconductors benefit strongly from the large amount and affordability of telecom lasers and components but there are demanding requirements on material development. We demonstrate continuous-wave (CW) photomixing with a setup that only uses ErAs:In(Al)GaAs devices with a peak dynamic range (DNR) of 78 dB and a bandwidth of ∼3.65 THz at an integration time of 300 ms and only 26 mW laser power on each device. The ErAs:InGaAs receiver further features a factor of two lower noise equivalent power (NEP) than a state-of-the-art photoconductor, despite an antenna mismatch.

Item Type: Article
Erschienen: 2017
Creators: Fernandez Olvera, A. D. J. and Lu, H. and Gossard, A. C. and Preu, S.
Title: Continuous-wave 1550 nm operated terahertz system using ErAs:In(Al)GaAs photo-conductors with 52 dB dynamic range at 1 THz
Language: English
Abstract:

Telecom-wavelength compatible photoconductors benefit strongly from the large amount and affordability of telecom lasers and components but there are demanding requirements on material development. We demonstrate continuous-wave (CW) photomixing with a setup that only uses ErAs:In(Al)GaAs devices with a peak dynamic range (DNR) of 78 dB and a bandwidth of ∼3.65 THz at an integration time of 300 ms and only 26 mW laser power on each device. The ErAs:InGaAs receiver further features a factor of two lower noise equivalent power (NEP) than a state-of-the-art photoconductor, despite an antenna mismatch.

Journal or Publication Title: Opt. Express
Volume: 25
Number: 23
Publisher: OSA
Uncontrolled Keywords: Photoconductivity; Photoconductive materials; Detectors; Far infrared or terahertz
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics > Terahertz Systems Technology
Date Deposited: 05 Dec 2017 12:54
DOI: 10.1364/OE.25.029492
Official URL: http://www.tsys.tu-darmstadt.de/Preu_ErAsInGaAs_CW
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