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The (001) 3C SiC surface termination and band structure after common wet chemical etching procedures, stated by XPS, LEED, and HREELS

Tengeler, Sven ; Kaiser, Bernhard ; Ferro, Gabriel ; Chaussende, Didier ; Jaegermann, Wolfram (2018)
The (001) 3C SiC surface termination and band structure after common wet chemical etching procedures, stated by XPS, LEED, and HREELS.
In: Applied Surface Science, 427
doi: 10.1016/j.apsusc.2017.08.220
Artikel, Bibliographie

Kurzbeschreibung (Abstract)

The (001) surface of cubic silicon carbide (3C SiC) after cleaning, Ar sputtering and three different wet chemical etching procedures was thoroughly investigated via (angle resolved) XPS, HREELS, and LEED. While Ar sputtering was found to be unsuitable for surface preparation, all three employed wet chemical etching procedures (piranha/NH4F, piranha/HF, and RCA) provide a clean surface. HF as oxide removal agent tends to result in fluorine traces on the sample surface, despite thorough rinsing. All procedures yield a 1 × 1 Si–OH/C–H terminated surface. However, the XPS spectra reveal some differences in the resulting surface states. NH4F for oxide removal produces a flat band situation, whereas the other two procedures result in a slight downward (HF) or upward (RCA) band bending. Because the band bending is small, it can be concluded that the number of unsaturated surface defects is low.

Typ des Eintrags: Artikel
Erschienen: 2018
Autor(en): Tengeler, Sven ; Kaiser, Bernhard ; Ferro, Gabriel ; Chaussende, Didier ; Jaegermann, Wolfram
Art des Eintrags: Bibliographie
Titel: The (001) 3C SiC surface termination and band structure after common wet chemical etching procedures, stated by XPS, LEED, and HREELS
Sprache: Englisch
Publikationsjahr: 1 Januar 2018
Verlag: Elsevier Science Publishing
Titel der Zeitschrift, Zeitung oder Schriftenreihe: Applied Surface Science
Jahrgang/Volume einer Zeitschrift: 427
DOI: 10.1016/j.apsusc.2017.08.220
URL / URN: https://doi.org/10.1016/j.apsusc.2017.08.220
Kurzbeschreibung (Abstract):

The (001) surface of cubic silicon carbide (3C SiC) after cleaning, Ar sputtering and three different wet chemical etching procedures was thoroughly investigated via (angle resolved) XPS, HREELS, and LEED. While Ar sputtering was found to be unsuitable for surface preparation, all three employed wet chemical etching procedures (piranha/NH4F, piranha/HF, and RCA) provide a clean surface. HF as oxide removal agent tends to result in fluorine traces on the sample surface, despite thorough rinsing. All procedures yield a 1 × 1 Si–OH/C–H terminated surface. However, the XPS spectra reveal some differences in the resulting surface states. NH4F for oxide removal produces a flat band situation, whereas the other two procedures result in a slight downward (HF) or upward (RCA) band bending. Because the band bending is small, it can be concluded that the number of unsaturated surface defects is low.

Freie Schlagworte: 3C-SiC, XPS, LEED, HREELS, Band diagram, Wet chemical etching, Work function, interface
Fachbereich(e)/-gebiet(e): 11 Fachbereich Material- und Geowissenschaften
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Oberflächenforschung
Hinterlegungsdatum: 27 Sep 2017 08:14
Letzte Änderung: 26 Jun 2018 11:06
PPN:
Sponsoren: We are grateful for the financial support by the DFG in the framework of the Excellence Initiative, Darmstadt Graduate School of Excellence Energy Science and Engineering (GSC 1070).
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