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Multiple magnetoelectric coupling effect in BaTiO3/Sr2CoMoO6 heterostructures

Liu, Chang and Wan, Wenhui and Gong, Sai and Zhang, Hongbin and Guo, Wei (2017):
Multiple magnetoelectric coupling effect in BaTiO3/Sr2CoMoO6 heterostructures.
7, In: Scientific Reports, (1), Nature, ISSN 2045-2322, DOI: 10.1038/s41598-017-03876-6,
[Online-Edition: https://doi.org/10.1038/s41598-017-03876-6],
[Article]

Abstract

Due to the demand of controlling magnetism by electric fields for future storage devices, materials with magnetoelectric coupling are of great interests. Based on first-principles calculations, we study the electronic and magnetic properties of a double perovskite Sr2CoMoO6 (SCMO) in a hybrid heterostructure combined with BaTiO3 (BTO) in different polarization states. The calculations show that by introducing ferroelectric state in BTO, SCMO transforms from an antiferromagnetic semiconductor to a half-metal. Specially, altering the polarization direction not only controls the interfacial magnetic moment, but also changes the orbital occupancy of the Co-3d state. This novel multiple magnetoelectric coupling opens possibilities for designing new type of spintronic and microelectronic devices with controllable degree of freedom of interfacial electrons in the heterostructures.

Item Type: Article
Erschienen: 2017
Creators: Liu, Chang and Wan, Wenhui and Gong, Sai and Zhang, Hongbin and Guo, Wei
Title: Multiple magnetoelectric coupling effect in BaTiO3/Sr2CoMoO6 heterostructures
Language: English
Abstract:

Due to the demand of controlling magnetism by electric fields for future storage devices, materials with magnetoelectric coupling are of great interests. Based on first-principles calculations, we study the electronic and magnetic properties of a double perovskite Sr2CoMoO6 (SCMO) in a hybrid heterostructure combined with BaTiO3 (BTO) in different polarization states. The calculations show that by introducing ferroelectric state in BTO, SCMO transforms from an antiferromagnetic semiconductor to a half-metal. Specially, altering the polarization direction not only controls the interfacial magnetic moment, but also changes the orbital occupancy of the Co-3d state. This novel multiple magnetoelectric coupling opens possibilities for designing new type of spintronic and microelectronic devices with controllable degree of freedom of interfacial electrons in the heterostructures.

Journal or Publication Title: Scientific Reports
Volume: 7
Number: 1
Publisher: Nature
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Theory of Magnetic Materials
Date Deposited: 27 Jul 2017 09:08
DOI: 10.1038/s41598-017-03876-6
Official URL: https://doi.org/10.1038/s41598-017-03876-6
Funders: This work was financially supported by the National Natural Science Foundation of China (Grant No. 21503014) and Beijing Institute of Technology Research Fund Program for Young Scholars (Grant No. 2015CX04034 and 20151842001)., Hongbin Zhang acknowledges the financial support from the LOEWE project RESPONSE funded by the Ministry of Higher Education, Research and the Arts (HMWK) of the Hessen state (Germany).
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