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Facile fabrication of electrolyte-gated single-crystalline cuprous oxide nanowire field-effect transistors

Stoesser, Anna and von Seggern, Falk and Purohit, Suneeti and Nasr, Babak and Kruk, Robert and Dehm, Simone and Wang, Di and Hahn, Horst and Dasgupta, Subho (2016):
Facile fabrication of electrolyte-gated single-crystalline cuprous oxide nanowire field-effect transistors.
27, In: Nanotechnology, (41), IOP PUBLISHING LTD, England, p. 415205, ISSN 0957-4484, [Online-Edition: https://doi.org/10.1088/0957-4484/27/41/415205],
[Article]

Abstract

Oxide semiconductors are considered to be one of the forefront candidates for the new generation, high-performance electronics. However, one of the major limitations for oxide electronics is the scarcity of an equally good hole-conducting semiconductor, which can provide identical performance for the p-type metal oxide semiconductor field-effect transistors as compared to their electron conducting counterparts. In this quest, here we present a bulk synthesis method for single crystalline cuprous oxide (Cu2O) nanowires, their chemical and morphological characterization and suitability as active channel material in electrolyte-gated, low-power, field-effect transistors (FETs) for portable and flexible logic circuits. The bulk synthesis method used in the present study includes two steps: namely hydrothermal synthesis of the nanowires and the removal of the surface organic contaminants. The surface treated nanowires are then dispersed on a receiver substrate where the passive electrodes are structured, followed by printing of a composite solid polymer electrolyte (CSPE), chosen as the gate insulator. The characteristic electrical properties of individual nanowire FETs are found to be quite interesting including accumulation-mode operation and field-effect mobility of 0.15 cm(2) V-1 s(-1).

Item Type: Article
Erschienen: 2016
Creators: Stoesser, Anna and von Seggern, Falk and Purohit, Suneeti and Nasr, Babak and Kruk, Robert and Dehm, Simone and Wang, Di and Hahn, Horst and Dasgupta, Subho
Title: Facile fabrication of electrolyte-gated single-crystalline cuprous oxide nanowire field-effect transistors
Language: English
Abstract:

Oxide semiconductors are considered to be one of the forefront candidates for the new generation, high-performance electronics. However, one of the major limitations for oxide electronics is the scarcity of an equally good hole-conducting semiconductor, which can provide identical performance for the p-type metal oxide semiconductor field-effect transistors as compared to their electron conducting counterparts. In this quest, here we present a bulk synthesis method for single crystalline cuprous oxide (Cu2O) nanowires, their chemical and morphological characterization and suitability as active channel material in electrolyte-gated, low-power, field-effect transistors (FETs) for portable and flexible logic circuits. The bulk synthesis method used in the present study includes two steps: namely hydrothermal synthesis of the nanowires and the removal of the surface organic contaminants. The surface treated nanowires are then dispersed on a receiver substrate where the passive electrodes are structured, followed by printing of a composite solid polymer electrolyte (CSPE), chosen as the gate insulator. The characteristic electrical properties of individual nanowire FETs are found to be quite interesting including accumulation-mode operation and field-effect mobility of 0.15 cm(2) V-1 s(-1).

Journal or Publication Title: Nanotechnology
Volume: 27
Number: 41
Publisher: IOP PUBLISHING LTD, England
Uncontrolled Keywords: nanowires, oxide semiconductors, field-effect Transistors, polypyrrole, MOSFETs, copper oxide
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Joint Research Laboratory Nanomaterials
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
Date Deposited: 26 Jul 2017 07:52
Official URL: https://doi.org/10.1088/0957-4484/27/41/415205
Identification Number: doi:10.1088/0957-4484/27/41/415205
Funders: The authors would like to acknowledge the financial support from Helmholtz Association in the form of Helmholtz Virtual Institute VI-530.
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