Brandt, Michael ; Schüßler, M. ; Parmeggiani, E. ; Lin, C. ; Simon, A. ; Hartnagel, H. L. (1997)
Thermal simulation and characterisation of the reliability of terahertz Schottky diodes.
In: Microelectronics Reliability, 37 (10-11)
doi: 10.1016/S0026-2714(97)00134-0
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
Pulsed stress reliability investigations have been carried out for Schottky diodes. A thermal characterisation of the devices is performed using a numerical, coupled electrical thermal SPICE simulator. Different degradation mechanisms have been identified investigated. A comparison between thermal stress and electrical stress shows an influence of the operating current density and the anode diameter on the device degradation. Analytical calculations, simulation results, and results from the Wunsch-Bell model have been compared.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 1997 |
| Autor(en): | Brandt, Michael ; Schüßler, M. ; Parmeggiani, E. ; Lin, C. ; Simon, A. ; Hartnagel, H. L. |
| Art des Eintrags: | Bibliographie |
| Titel: | Thermal simulation and characterisation of the reliability of terahertz Schottky diodes |
| Sprache: | Englisch |
| Publikationsjahr: | 1 Oktober 1997 |
| Verlag: | Elsevier |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Microelectronics Reliability |
| Jahrgang/Volume einer Zeitschrift: | 37 |
| (Heft-)Nummer: | 10-11 |
| DOI: | 10.1016/S0026-2714(97)00134-0 |
| Kurzbeschreibung (Abstract): | Pulsed stress reliability investigations have been carried out for Schottky diodes. A thermal characterisation of the devices is performed using a numerical, coupled electrical thermal SPICE simulator. Different degradation mechanisms have been identified investigated. A comparison between thermal stress and electrical stress shows an influence of the operating current density and the anode diameter on the device degradation. Analytical calculations, simulation results, and results from the Wunsch-Bell model have been compared. |
| Zusätzliche Informationen: | 8th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Arcachon, France, 07. to 10.10.1997 |
| Fachbereich(e)/-gebiet(e): | 18 Fachbereich Elektrotechnik und Informationstechnik 18 Fachbereich Elektrotechnik und Informationstechnik > Mikrowellenelektronik |
| Hinterlegungsdatum: | 19 Nov 2008 16:04 |
| Letzte Änderung: | 13 Jun 2023 09:27 |
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