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Reconfigurable package integrated 20 W RF power GaN HEMT with discrete thick-film MIM BST varactors

Preis, S. and Wiens, A. and Maune, H. and Heinrich, W. and Jakoby, R. and Bengtsson, O. (2016):
Reconfigurable package integrated 20 W RF power GaN HEMT with discrete thick-film MIM BST varactors.
In: Electronics Letters, pp. 296-298, 52, (4), ISSN 0013-5194, [Online-Edition: http://dx.doi.org/10.1049/el.2015.4109],
[Article]

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Item Type: Article
Erschienen: 2016
Creators: Preis, S. and Wiens, A. and Maune, H. and Heinrich, W. and Jakoby, R. and Bengtsson, O.
Title: Reconfigurable package integrated 20 W RF power GaN HEMT with discrete thick-film MIM BST varactors
Language: German
Journal or Publication Title: Electronics Letters
Volume: 52
Number: 4
Uncontrolled Keywords: III-V semiconductors;MIM devices;barium compounds;gallium compounds;high electron mobility transistors;software radio;strontium compounds;thick film capacitors;varactors;wide band gap semiconductors;GaN-Ba0.8Sr0.2TiO3;discrete thick-film metal-insulator-metal barium-strontium-titanate varactor;electronically two-dimensional reconfigurable L-section matching network;field simulation;gallium nitride high-electron-mobility transistor;large-signal model;load impedance tunability;metal-insulator-metal BST varactor;output power;power 20 W;power 20.9 W;power added efficiency;reconfigurable package integrated radio frequency;tuneable module
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics > Microwave Engineering
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics
Date Deposited: 28 Mar 2017 09:27
Official URL: http://dx.doi.org/10.1049/el.2015.4109
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