Preis, S. ; Wiens, A. ; Maune, H. ; Heinrich, W. ; Jakoby, R. ; Bengtsson, O. (2016):
Reconfigurable package integrated 20 W RF power GaN HEMT with discrete thick-film MIM BST varactors.
In: Electronics Letters, 52 (4), pp. 296-298. ISSN 0013-5194,
[Article]
Official URL: http://dx.doi.org/10.1049/el.2015.4109
| Item Type: | Article |
|---|---|
| Erschienen: | 2016 |
| Creators: | Preis, S. ; Wiens, A. ; Maune, H. ; Heinrich, W. ; Jakoby, R. ; Bengtsson, O. |
| Title: | Reconfigurable package integrated 20 W RF power GaN HEMT with discrete thick-film MIM BST varactors |
| Language: | German |
| Journal or Publication Title: | Electronics Letters |
| Journal volume: | 52 |
| Number: | 4 |
| Uncontrolled Keywords: | III-V semiconductors;MIM devices;barium compounds;gallium compounds;high electron mobility transistors;software radio;strontium compounds;thick film capacitors;varactors;wide band gap semiconductors;GaN-Ba0.8Sr0.2TiO3;discrete thick-film metal-insulator-metal barium-strontium-titanate varactor;electronically two-dimensional reconfigurable L-section matching network;field simulation;gallium nitride high-electron-mobility transistor;large-signal model;load impedance tunability;metal-insulator-metal BST varactor;output power;power 20 W;power 20.9 W;power added efficiency;reconfigurable package integrated radio frequency;tuneable module |
| Divisions: | 18 Department of Electrical Engineering and Information Technology 18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics > Microwave Engineering 18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics |
| Date Deposited: | 28 Mar 2017 09:27 |
| Official URL: | http://dx.doi.org/10.1049/el.2015.4109 |
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