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Wideband tunable GaN HEMT module utilizing thin-film BST varactors for efficiency optimization

Wiens, A. ; Preis, S. ; Schuster, C. ; Nikfalazar, M. ; Damm, C. ; Schuessler, M. ; Heinrich, W. ; Bengtsson, O. ; Jakoby, R. (2016):
Wideband tunable GaN HEMT module utilizing thin-film BST varactors for efficiency optimization.
pp. 1-3, 2016 IEEE MTT-S International Microwave Symposium (IMS), [Conference or Workshop Item]

Item Type: Conference or Workshop Item
Erschienen: 2016
Creators: Wiens, A. ; Preis, S. ; Schuster, C. ; Nikfalazar, M. ; Damm, C. ; Schuessler, M. ; Heinrich, W. ; Bengtsson, O. ; Jakoby, R.
Title: Wideband tunable GaN HEMT module utilizing thin-film BST varactors for efficiency optimization
Language: English
Uncontrolled Keywords: III-V semiconductors;UHF power amplifiers;gallium compounds;high electron mobility transistors;impedance matching;lead bonding;varactors;wide band gap semiconductors;HEMT;OIP3;TMN transforms;efficiency optimization;frequency 1 GHz to 2.5 GHz;resistance 50 ohm;thin-film BST varactors;transistor cell;tunable amplifier module;tunable impedance matching network;wire-bonding;Frequency measurement;Gallium nitride;HEMTs;Impedance;Power generation;Voltage measurement;passive circuits;power amplifiers;tunable impedance matching
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics (IMP) > Microwave Engineering
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics (IMP)
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics (IMP) > Terahertz Sensors Group
Event Title: 2016 IEEE MTT-S International Microwave Symposium (IMS)
Date Deposited: 27 Mar 2017 11:41
Official URL: https://doi.org/10.1109/MWSYM.2016.7540375
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