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Wideband tunable GaN HEMT module utilizing thin-film BST varactors for efficiency optimization

Wiens, A. and Preis, S. and Schuster, C. and Nikfalazar, M. and Damm, C. and Schuessler, M. and Heinrich, W. and Bengtsson, O. and Jakoby, R. (2016):
Wideband tunable GaN HEMT module utilizing thin-film BST varactors for efficiency optimization.
In: 2016 IEEE MTT-S International Microwave Symposium (IMS), [Online-Edition: https://doi.org/10.1109/MWSYM.2016.7540375],
[Conference or Workshop Item]

Item Type: Conference or Workshop Item
Erschienen: 2016
Creators: Wiens, A. and Preis, S. and Schuster, C. and Nikfalazar, M. and Damm, C. and Schuessler, M. and Heinrich, W. and Bengtsson, O. and Jakoby, R.
Title: Wideband tunable GaN HEMT module utilizing thin-film BST varactors for efficiency optimization
Language: English
Uncontrolled Keywords: III-V semiconductors;UHF power amplifiers;gallium compounds;high electron mobility transistors;impedance matching;lead bonding;varactors;wide band gap semiconductors;HEMT;OIP3;TMN transforms;efficiency optimization;frequency 1 GHz to 2.5 GHz;resistance 50 ohm;thin-film BST varactors;transistor cell;tunable amplifier module;tunable impedance matching network;wire-bonding;Frequency measurement;Gallium nitride;HEMTs;Impedance;Power generation;Voltage measurement;passive circuits;power amplifiers;tunable impedance matching
Divisions: 18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics > Microwave Engineering
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics > Terahertz Sensors Group
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics
18 Department of Electrical Engineering and Information Technology
Event Title: 2016 IEEE MTT-S International Microwave Symposium (IMS)
Date Deposited: 27 Mar 2017 11:41
Official URL: https://doi.org/10.1109/MWSYM.2016.7540375
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