Wiens, A. and Preis, S. and Schuster, C. and Nikfalazar, M. and Damm, C. and Schuessler, M. and Heinrich, W. and Bengtsson, O. and Jakoby, R. (2016):
Wideband tunable GaN HEMT module utilizing thin-film BST varactors for efficiency optimization.
In: 2016 IEEE MTT-S International Microwave Symposium (IMS), [Online-Edition: https://doi.org/10.1109/MWSYM.2016.7540375],
[Conference or Workshop Item]
Official URL: https://doi.org/10.1109/MWSYM.2016.7540375
| Item Type: | Conference or Workshop Item |
|---|---|
| Erschienen: | 2016 |
| Creators: | Wiens, A. and Preis, S. and Schuster, C. and Nikfalazar, M. and Damm, C. and Schuessler, M. and Heinrich, W. and Bengtsson, O. and Jakoby, R. |
| Title: | Wideband tunable GaN HEMT module utilizing thin-film BST varactors for efficiency optimization |
| Language: | English |
| Uncontrolled Keywords: | III-V semiconductors;UHF power amplifiers;gallium compounds;high electron mobility transistors;impedance matching;lead bonding;varactors;wide band gap semiconductors;HEMT;OIP3;TMN transforms;efficiency optimization;frequency 1 GHz to 2.5 GHz;resistance 50 ohm;thin-film BST varactors;transistor cell;tunable amplifier module;tunable impedance matching network;wire-bonding;Frequency measurement;Gallium nitride;HEMTs;Impedance;Power generation;Voltage measurement;passive circuits;power amplifiers;tunable impedance matching |
| Divisions: | 18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics > Microwave Engineering 18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics > Terahertz Sensors Group 18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics 18 Department of Electrical Engineering and Information Technology |
| Event Title: | 2016 IEEE MTT-S International Microwave Symposium (IMS) |
| Date Deposited: | 27 Mar 2017 11:41 |
| Official URL: | https://doi.org/10.1109/MWSYM.2016.7540375 |
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