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Response time of VSWR protection for GaN HEMT based power amplifiers

Preis, S. ; Ferretti, J. ; Wolff, N. ; Wiens, A. ; Jakoby, R. ; Heinrich, W. ; Bengtsson, O. (2016):
Response time of VSWR protection for GaN HEMT based power amplifiers.
pp. 401-404, 2016 46th European Microwave Conference (EuMC), [Conference or Workshop Item]

Item Type: Conference or Workshop Item
Erschienen: 2016
Creators: Preis, S. ; Ferretti, J. ; Wolff, N. ; Wiens, A. ; Jakoby, R. ; Heinrich, W. ; Bengtsson, O.
Title: Response time of VSWR protection for GaN HEMT based power amplifiers
Language: English
Uncontrolled Keywords: III-V semiconductors;electric breakdown;gallium compounds;high electron mobility transistors;power amplifiers;wide band gap semiconductors;BST varactors;GaN;GaN HEMT based power amplifiers;GaN based voltage switch;VSWR protection response time;barium-strontium-titanate varactors;high voltage standing wave ratios;thermal breakdown properties;thick-film BST MIM varactor;varactor modulator;voltage breakdown properties;Gallium nitride;Logic gates;Switches;Transistors;Varactors;Voltage control;Voltage measurement;BST;GaN;HEMT;VSWR;ceramics;power amplifier;varactors
Divisions: 18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics (IMP) > Microwave Engineering
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics (IMP)
18 Department of Electrical Engineering and Information Technology
Event Title: 2016 46th European Microwave Conference (EuMC)
Date Deposited: 27 Mar 2017 11:40
Official URL: https://doi.org/10.1109/EuMC.2016.7824364
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