Preis, S. and Ferretti, J. and Wolff, N. and Wiens, A. and Jakoby, R. and Heinrich, W. and Bengtsson, O. (2016):
Response time of VSWR protection for GaN HEMT based power amplifiers.
pp. 401-404, 2016 46th European Microwave Conference (EuMC), [Conference or Workshop Item]
Official URL: https://doi.org/10.1109/EuMC.2016.7824364
| Item Type: | Conference or Workshop Item |
|---|---|
| Erschienen: | 2016 |
| Creators: | Preis, S. and Ferretti, J. and Wolff, N. and Wiens, A. and Jakoby, R. and Heinrich, W. and Bengtsson, O. |
| Title: | Response time of VSWR protection for GaN HEMT based power amplifiers |
| Language: | English |
| Uncontrolled Keywords: | III-V semiconductors;electric breakdown;gallium compounds;high electron mobility transistors;power amplifiers;wide band gap semiconductors;BST varactors;GaN;GaN HEMT based power amplifiers;GaN based voltage switch;VSWR protection response time;barium-strontium-titanate varactors;high voltage standing wave ratios;thermal breakdown properties;thick-film BST MIM varactor;varactor modulator;voltage breakdown properties;Gallium nitride;Logic gates;Switches;Transistors;Varactors;Voltage control;Voltage measurement;BST;GaN;HEMT;VSWR;ceramics;power amplifier;varactors |
| Divisions: | 18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics > Microwave Engineering 18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics 18 Department of Electrical Engineering and Information Technology |
| Event Title: | 2016 46th European Microwave Conference (EuMC) |
| Date Deposited: | 27 Mar 2017 11:40 |
| Official URL: | https://doi.org/10.1109/EuMC.2016.7824364 |
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