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Response time of VSWR protection for GaN HEMT based power amplifiers

Preis, S. and Ferretti, J. and Wolff, N. and Wiens, A. and Jakoby, R. and Heinrich, W. and Bengtsson, O. (2016):
Response time of VSWR protection for GaN HEMT based power amplifiers.
In: 2016 46th European Microwave Conference (EuMC), [Online-Edition: https://doi.org/10.1109/EuMC.2016.7824364],
[Conference or Workshop Item]

Item Type: Conference or Workshop Item
Erschienen: 2016
Creators: Preis, S. and Ferretti, J. and Wolff, N. and Wiens, A. and Jakoby, R. and Heinrich, W. and Bengtsson, O.
Title: Response time of VSWR protection for GaN HEMT based power amplifiers
Language: English
Uncontrolled Keywords: III-V semiconductors;electric breakdown;gallium compounds;high electron mobility transistors;power amplifiers;wide band gap semiconductors;BST varactors;GaN;GaN HEMT based power amplifiers;GaN based voltage switch;VSWR protection response time;barium-strontium-titanate varactors;high voltage standing wave ratios;thermal breakdown properties;thick-film BST MIM varactor;varactor modulator;voltage breakdown properties;Gallium nitride;Logic gates;Switches;Transistors;Varactors;Voltage control;Voltage measurement;BST;GaN;HEMT;VSWR;ceramics;power amplifier;varactors
Divisions: 18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics > Microwave Engineering
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics
18 Department of Electrical Engineering and Information Technology
Event Title: 2016 46th European Microwave Conference (EuMC)
Date Deposited: 27 Mar 2017 11:40
Official URL: https://doi.org/10.1109/EuMC.2016.7824364
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