TU Darmstadt / ULB / TUbiblio

Polarization-Mediated Modulation of Electronic and Transport Properties of Hybrid MoS_2–BaTiO_3–SrRuO_3 Tunnel Junctions

Li, Tao and Sharma, Pankaj and Lipatov, Alexey and Lee, Hyungwoo and Lee, Jung-Woo and Zhuravlev, Mikhail Y. and Paudel, Tula R. and Genenko, Yuri A. and Eom, Chang-Beom and Tsymbal, Evgeny Y. and Sinitskii, Alexander and Gruverman, Alexei (2017):
Polarization-Mediated Modulation of Electronic and Transport Properties of Hybrid MoS_2–BaTiO_3–SrRuO_3 Tunnel Junctions.
In: Nano Letters, pp. 922-927, 17, (2), ISSN 1530-6984,
[Online-Edition: http://doi.org/10.1021/acs.nanolett.6b04247],
[Article]

Abstract

Hybrid structures composed of ferroelectric thin films and functional two-dimensional (2D) materials may exhibit unique characteristics and reveal new phenomena due to the cross-interface coupling between their intrinsic properties. In this report, we demonstrate a symbiotic interplay between spontaneous polarization of the ultrathin BaTiO_3 ferroelectric film and conductivity of the adjacent molybdenum disulfide (MoS_2) layer, a 2D narrow-bandgap semiconductor. Polarization-induced modulation of the electronic properties of MoS_2 results in a giant tunneling electroresistance effect in the hybrid MoS_2–BaTiO_3–SrRuO_3 ferroelectric tunnel junctions (FTJs) with an OFF-to-ON resistance ratio as high as 10^4, a 50-fold increase in comparison with the same type of FTJs with metal electrodes. The effect stems from the reversible accumulation-depletion of the majority carriers in the MoS_2 electrode in response to ferroelectric switching, which alters the barrier at the MoS_2–BaTiO_3 interface. Continuous tunability of resistive states realized via stable sequential domain structures in BaTiO_3 adds memristive functionality to the hybrid FTJs. The use of narrow band 2D semiconductors in conjunction with ferroelectric films provides a novel pathway for development of the electronic devices with enhanced performance.

Item Type: Article
Erschienen: 2017
Creators: Li, Tao and Sharma, Pankaj and Lipatov, Alexey and Lee, Hyungwoo and Lee, Jung-Woo and Zhuravlev, Mikhail Y. and Paudel, Tula R. and Genenko, Yuri A. and Eom, Chang-Beom and Tsymbal, Evgeny Y. and Sinitskii, Alexander and Gruverman, Alexei
Title: Polarization-Mediated Modulation of Electronic and Transport Properties of Hybrid MoS_2–BaTiO_3–SrRuO_3 Tunnel Junctions
Language: English
Abstract:

Hybrid structures composed of ferroelectric thin films and functional two-dimensional (2D) materials may exhibit unique characteristics and reveal new phenomena due to the cross-interface coupling between their intrinsic properties. In this report, we demonstrate a symbiotic interplay between spontaneous polarization of the ultrathin BaTiO_3 ferroelectric film and conductivity of the adjacent molybdenum disulfide (MoS_2) layer, a 2D narrow-bandgap semiconductor. Polarization-induced modulation of the electronic properties of MoS_2 results in a giant tunneling electroresistance effect in the hybrid MoS_2–BaTiO_3–SrRuO_3 ferroelectric tunnel junctions (FTJs) with an OFF-to-ON resistance ratio as high as 10^4, a 50-fold increase in comparison with the same type of FTJs with metal electrodes. The effect stems from the reversible accumulation-depletion of the majority carriers in the MoS_2 electrode in response to ferroelectric switching, which alters the barrier at the MoS_2–BaTiO_3 interface. Continuous tunability of resistive states realized via stable sequential domain structures in BaTiO_3 adds memristive functionality to the hybrid FTJs. The use of narrow band 2D semiconductors in conjunction with ferroelectric films provides a novel pathway for development of the electronic devices with enhanced performance.

Journal or Publication Title: Nano Letters
Volume: 17
Number: 2
Uncontrolled Keywords: 2D materials; ferroelectric tunnel junctions; MoS2; Resistive switching
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Materials Modelling
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
Date Deposited: 24 Mar 2017 13:08
Official URL: http://doi.org/10.1021/acs.nanolett.6b04247
Identification Number: doi:10.1021/acs.nanolett.6b04247
Funders: This work was supported by the National Science Foundation (NSF) through Materials Research Science and Engineering Center (MRSEC) under Grant DMR-1420645 (thin fi lm fabrication and theoretical modeling) and under grant no. ECCS-1509874 (tunnel junction, fabrication and electrical characterization). The authors also acknowledge the support by the Center for Nanoferroic Devices (CNFD), a Semi- conductor Research Corporation Nanoelectronics Research Initiative (SRC-NRI) under task ID 2398.002, sponsored by, NIST and the Nanoelectronics Research Corporation (NERC).
Export:
Suche nach Titel in: TUfind oder in Google

Optionen (nur für Redakteure)

View Item View Item