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Understanding the temperature-dependent evolution of solution processed metal oxide transistor characteristics based on molecular precursor derived amorphous indium zinc oxide

Sanctis, Shawn and Hoffmann, Rudolf C. and Precht, Ruben and Anwand, Wolfgang and Schneider, Jörg J. (2016):
Understanding the temperature-dependent evolution of solution processed metal oxide transistor characteristics based on molecular precursor derived amorphous indium zinc oxide.
In: J. Mater. Chem. C, pp. 10935-10944, 4, (46), ISSN 2050-7526, [Online-Edition: http://dx.doi.org/10.1039/C6TC03915D],
[Article]

Item Type: Article
Erschienen: 2016
Creators: Sanctis, Shawn and Hoffmann, Rudolf C. and Precht, Ruben and Anwand, Wolfgang and Schneider, Jörg J.
Title: Understanding the temperature-dependent evolution of solution processed metal oxide transistor characteristics based on molecular precursor derived amorphous indium zinc oxide
Language: English
Journal or Publication Title: J. Mater. Chem. C
Volume: 4
Number: 46
Divisions: 11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Surface Science
07 Department of Chemistry
07 Department of Chemistry > Fachgebiet Anorganische Chemie
11 Department of Materials and Earth Sciences
Date Deposited: 25 Nov 2016 13:01
Official URL: http://dx.doi.org/10.1039/C6TC03915D
Identification Number: doi:10.1039/C6TC03915D
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