Wombacher, Tobias ; Gassmann, Andrea ; Foro, Sabine ; Seggern, Heinz von ; Schneider, Jörg J. (2016):
Structural Polymorphism and Thin Film Transistor Behavior in the Fullerene Framework Molecule 5,6;11,12-di-o-Phenylenetetracene.
In: Angewandte Chemie International Edition, 55 (20), pp. 6041-6046. WILEY-VCH Verlag GmbH, Weinheim, Germany, ISSN 14337851,
DOI: 10.1002/anie.201601517,
[Article]
Abstract
The molecular structure of the hydrocarbon 5,6;11,12-di-o-phenylenetetracene (DOPT), its material characterization and evaluation of electronic properties is reported for the first time. A single-crystal X-ray study reveals two different motifs of intramolecular overlap with herringbone-type arrangement displaying either face-to-edge or co-facial face-to-face packing depicting intensive - interactions. Density functional theory (DFT) calculations underpin that a favorable electronic transport mechanism occurs by a charge hopping process due to a -bond overlap in the DOPT polymorph with co-facial arene orientation. The performance of polycrystalline DOPT films as active organic semiconducting layer in a state-of-the-art organic field effect transistor (OFET) device was evaluated and proves to be film thickness dependent. For 40nm layer thickness it displays a saturation hole mobility ((hole)) of up to 0.01cm(2)V(-1)s(-1) and an on/off-ratio (I-on/I-off) of 1.5x10(3).
| Item Type: | Article |
|---|---|
| Erschienen: | 2016 |
| Creators: | Wombacher, Tobias ; Gassmann, Andrea ; Foro, Sabine ; Seggern, Heinz von ; Schneider, Jörg J. |
| Title: | Structural Polymorphism and Thin Film Transistor Behavior in the Fullerene Framework Molecule 5,6;11,12-di-o-Phenylenetetracene |
| Language: | English |
| Abstract: | The molecular structure of the hydrocarbon 5,6;11,12-di-o-phenylenetetracene (DOPT), its material characterization and evaluation of electronic properties is reported for the first time. A single-crystal X-ray study reveals two different motifs of intramolecular overlap with herringbone-type arrangement displaying either face-to-edge or co-facial face-to-face packing depicting intensive - interactions. Density functional theory (DFT) calculations underpin that a favorable electronic transport mechanism occurs by a charge hopping process due to a -bond overlap in the DOPT polymorph with co-facial arene orientation. The performance of polycrystalline DOPT films as active organic semiconducting layer in a state-of-the-art organic field effect transistor (OFET) device was evaluated and proves to be film thickness dependent. For 40nm layer thickness it displays a saturation hole mobility ((hole)) of up to 0.01cm(2)V(-1)s(-1) and an on/off-ratio (I-on/I-off) of 1.5x10(3). |
| Journal or Publication Title: | Angewandte Chemie International Edition |
| Journal volume: | 55 |
| Number: | 20 |
| Publisher: | WILEY-VCH Verlag GmbH, Weinheim, Germany |
| Uncontrolled Keywords: | fullerene, fused-ring systems, hydrocarbons, organic field effect transistor, polycycles |
| Divisions: | 11 Department of Materials and Earth Sciences 11 Department of Materials and Earth Sciences > Material Science 11 Department of Materials and Earth Sciences > Material Science > Electronic Materials 11 Department of Materials and Earth Sciences > Material Science > Structure Research 07 Department of Chemistry 07 Department of Chemistry > Fachgebiet Anorganische Chemie 07 Department of Chemistry > Physical Chemistry |
| Date Deposited: | 18 Nov 2016 11:39 |
| DOI: | 10.1002/anie.201601517 |
| Official URL: | https://doi.org/10.1002/anie.201601517 |
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