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Structural Polymorphism and Thin Film Transistor Behavior in the Fullerene Framework Molecule 5,6;11,12-di-o-Phenylenetetracene

Wombacher, Tobias and Gassmann, Andrea and Foro, Sabine and von Seggern, Heinz and Schneider, Jörg J. (2016):
Structural Polymorphism and Thin Film Transistor Behavior in the Fullerene Framework Molecule 5,6;11,12-di-o-Phenylenetetracene.
In: Angewandte Chemie International Edition, WILEY-VCH Verlag GmbH, Weinheim, Germany, pp. 6041-6046, 55, (20), ISSN 14337851, DOI: 10.1002/anie.201601517, [Online-Edition: https://doi.org/10.1002/anie.201601517],
[Article]

Abstract

The molecular structure of the hydrocarbon 5,6;11,12-di-o-phenylenetetracene (DOPT), its material characterization and evaluation of electronic properties is reported for the first time. A single-crystal X-ray study reveals two different motifs of intramolecular overlap with herringbone-type arrangement displaying either face-to-edge or co-facial face-to-face packing depicting intensive - interactions. Density functional theory (DFT) calculations underpin that a favorable electronic transport mechanism occurs by a charge hopping process due to a -bond overlap in the DOPT polymorph with co-facial arene orientation. The performance of polycrystalline DOPT films as active organic semiconducting layer in a state-of-the-art organic field effect transistor (OFET) device was evaluated and proves to be film thickness dependent. For 40nm layer thickness it displays a saturation hole mobility ((hole)) of up to 0.01cm(2)V(-1)s(-1) and an on/off-ratio (I-on/I-off) of 1.5x10(3).

Item Type: Article
Erschienen: 2016
Creators: Wombacher, Tobias and Gassmann, Andrea and Foro, Sabine and von Seggern, Heinz and Schneider, Jörg J.
Title: Structural Polymorphism and Thin Film Transistor Behavior in the Fullerene Framework Molecule 5,6;11,12-di-o-Phenylenetetracene
Language: English
Abstract:

The molecular structure of the hydrocarbon 5,6;11,12-di-o-phenylenetetracene (DOPT), its material characterization and evaluation of electronic properties is reported for the first time. A single-crystal X-ray study reveals two different motifs of intramolecular overlap with herringbone-type arrangement displaying either face-to-edge or co-facial face-to-face packing depicting intensive - interactions. Density functional theory (DFT) calculations underpin that a favorable electronic transport mechanism occurs by a charge hopping process due to a -bond overlap in the DOPT polymorph with co-facial arene orientation. The performance of polycrystalline DOPT films as active organic semiconducting layer in a state-of-the-art organic field effect transistor (OFET) device was evaluated and proves to be film thickness dependent. For 40nm layer thickness it displays a saturation hole mobility ((hole)) of up to 0.01cm(2)V(-1)s(-1) and an on/off-ratio (I-on/I-off) of 1.5x10(3).

Journal or Publication Title: Angewandte Chemie International Edition
Volume: 55
Number: 20
Publisher: WILEY-VCH Verlag GmbH, Weinheim, Germany
Uncontrolled Keywords: fullerene, fused-ring systems, hydrocarbons, organic field effect transistor, polycycles
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Electronic Materials
11 Department of Materials and Earth Sciences > Material Science > Structure Research
07 Department of Chemistry
07 Department of Chemistry > Fachgebiet Anorganische Chemie
07 Department of Chemistry > Physical Chemistry
Date Deposited: 18 Nov 2016 11:39
DOI: 10.1002/anie.201601517
Official URL: https://doi.org/10.1002/anie.201601517
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