Wen, Qingbo and Feng, Yao and Yu, Zhaoju and Peng, Dong-Liang and Nicoloso, Norbert and Ionescu, Emanuel and Riedel, Ralf and Colombo, P. (2016):
Microwave Absorption of SiC/HfCxN1−x/C Ceramic Nanocomposites with HfCxN1−x-Carbon Core-Shell Particles.
In: Journal of the American Ceramic Society, Wiley, pp. 2655-2663, 99, (8), ISSN 00027820, [Online-Edition: http://doi.org/10.1111/jace.14256],
[Article]
Abstract
The dielectric properties of high-temperature stable single-source precursor-derived SiC/HfCxN1−x/C ceramic nanocomposites are determined by microwave absorption in the X-band (8.2–12.4 GHz) at room temperature. The samples synthesized at 1700°C, denoted as SiC/5HfCxN1−x/C-1700°C and SiC/15HfCxN1−x/C-1700°C ceramics, comprising ≈ 1.3 and ≈ 4.2 vol% HfCxN1−x, respectively, show enhanced microwave absorption capability superior to hafnium-free SiC/C-1700°C. The minimum reflection loss of SiC/5HfCxN1−x/C-1700°C and SiC/15HfCxN1−x/C-1700°C are −47 and −32 dB, and the effective absorption bandwidth amount to 3.1 and 3.6 GHz, respectively. Segregated carbon, including graphitic carbon homogeneously dispersed in the SiC matrix and less ordered carbon deposited as a thin film on HfCxN1−x nanoparticles, accounts for the unique dielectric behavior of the SiC/HfCxN1−x/C ceramics. Due to their large reflection loss and their high chemical and temperature stability, SiC/5HfCxN1−x/C-1700°C and SiC/15HfCxN1−x/C-1700°C ceramics are promising candidate materials for electromagnetic interference applications in harsh environment.
| Item Type: | Article |
|---|---|
| Erschienen: | 2016 |
| Creators: | Wen, Qingbo and Feng, Yao and Yu, Zhaoju and Peng, Dong-Liang and Nicoloso, Norbert and Ionescu, Emanuel and Riedel, Ralf and Colombo, P. |
| Title: | Microwave Absorption of SiC/HfCxN1−x/C Ceramic Nanocomposites with HfCxN1−x-Carbon Core-Shell Particles |
| Language: | English |
| Abstract: | The dielectric properties of high-temperature stable single-source precursor-derived SiC/HfCxN1−x/C ceramic nanocomposites are determined by microwave absorption in the X-band (8.2–12.4 GHz) at room temperature. The samples synthesized at 1700°C, denoted as SiC/5HfCxN1−x/C-1700°C and SiC/15HfCxN1−x/C-1700°C ceramics, comprising ≈ 1.3 and ≈ 4.2 vol% HfCxN1−x, respectively, show enhanced microwave absorption capability superior to hafnium-free SiC/C-1700°C. The minimum reflection loss of SiC/5HfCxN1−x/C-1700°C and SiC/15HfCxN1−x/C-1700°C are −47 and −32 dB, and the effective absorption bandwidth amount to 3.1 and 3.6 GHz, respectively. Segregated carbon, including graphitic carbon homogeneously dispersed in the SiC matrix and less ordered carbon deposited as a thin film on HfCxN1−x nanoparticles, accounts for the unique dielectric behavior of the SiC/HfCxN1−x/C ceramics. Due to their large reflection loss and their high chemical and temperature stability, SiC/5HfCxN1−x/C-1700°C and SiC/15HfCxN1−x/C-1700°C ceramics are promising candidate materials for electromagnetic interference applications in harsh environment. |
| Journal or Publication Title: | Journal of the American Ceramic Society |
| Volume: | 99 |
| Number: | 8 |
| Publisher: | Wiley |
| Uncontrolled Keywords: | Core–shell structures, microwaves, nanocomposites, silicon carbide, dielectric materials/properties |
| Divisions: | 11 Department of Materials and Earth Sciences > Material Science > Dispersive Solids 11 Department of Materials and Earth Sciences > Material Science 11 Department of Materials and Earth Sciences |
| Date Deposited: | 17 Aug 2016 08:52 |
| Official URL: | http://doi.org/10.1111/jace.14256 |
| Identification Number: | doi:10.1111/jace.14256 |
| Funders: | Funded by National Natural Science Foundation of China. Grant Number: 50802079, Funded by Natural Science Foundation of Fujian Province of China. Grant Number: 2015J01221, Funded by National Basic Research Program of China. Grant Number: 2012CB933103, Funded by Fundamental Research Funds for the Central Universities. Grant Number: 20720150140, Funded by China Scholarship Council. Grant Number: 201206130059 |
| Export: |
Optionen (nur für Redakteure)
 |
View Item |
Drucken
Impressum