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Manipulation of polystyrene nanoparticles on a silicon wafer in the peak force tapping mode in water: pH-dependent friction and adhesion force

Schiwek, Simon and Heim, Lars-Oliver and Stark, Robert W. and Dietz, Christian :
Manipulation of polystyrene nanoparticles on a silicon wafer in the peak force tapping mode in water: pH-dependent friction and adhesion force.
[Online-Edition: http://dx.doi.org/10.1063/1.4914354]
In: Journal of Applied Physics, 117 (10) p. 104303. ISSN 0021-8979
[Article] , (2015)

Official URL: http://dx.doi.org/10.1063/1.4914354

Abstract

The friction force between nanoparticles and a silicon wafer is a crucial parameter for cleaning processes in the semiconductor industry. However, little is known about the pH-dependency of the friction forces and the shear strength at the interface. Here, we push polystyrene nanoparticles, 100 nm in diameter, with the tip of an atomic force microscope and measure the pH-dependency of the friction, adhesion, and normal forces on a silicon substrate covered with a native silicon dioxide layer. The peak force tapping mode was applied to control the vertical force on these particles. We successively increased the applied load until the particles started to move. The main advantage of this technique over single manipulation processes is the achievement of a large number of manipulation events in short time and in a straightforward manner. Geometrical considerations of the interaction forces at the tip-particle interface allowed us to calculate the friction force and shear strength from the applied normal force depending on the pH of an aqueous solution. The results clearly demonstrated that particle removal should be performed with a basic solution at pH 9 because of the low interaction forces between particle and substrate. (C) 2015 AIP Publishing LLC.

Item Type: Article
Erschienen: 2015
Creators: Schiwek, Simon and Heim, Lars-Oliver and Stark, Robert W. and Dietz, Christian
Title: Manipulation of polystyrene nanoparticles on a silicon wafer in the peak force tapping mode in water: pH-dependent friction and adhesion force
Language: English
Abstract:

The friction force between nanoparticles and a silicon wafer is a crucial parameter for cleaning processes in the semiconductor industry. However, little is known about the pH-dependency of the friction forces and the shear strength at the interface. Here, we push polystyrene nanoparticles, 100 nm in diameter, with the tip of an atomic force microscope and measure the pH-dependency of the friction, adhesion, and normal forces on a silicon substrate covered with a native silicon dioxide layer. The peak force tapping mode was applied to control the vertical force on these particles. We successively increased the applied load until the particles started to move. The main advantage of this technique over single manipulation processes is the achievement of a large number of manipulation events in short time and in a straightforward manner. Geometrical considerations of the interaction forces at the tip-particle interface allowed us to calculate the friction force and shear strength from the applied normal force depending on the pH of an aqueous solution. The results clearly demonstrated that particle removal should be performed with a basic solution at pH 9 because of the low interaction forces between particle and substrate. (C) 2015 AIP Publishing LLC.

Journal or Publication Title: Journal of Applied Physics
Volume: 117
Number: 10
Publisher: AMER INST PHYSICS, MELVILLE, NY USA
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Physics of Surfaces
Profile Areas
Profile Areas > Thermo-Fluids & Interfaces
Exzellenzinitiative
Exzellenzinitiative > Clusters of Excellence
Zentrale Einrichtungen
Date Deposited: 08 Jun 2016 08:53
Official URL: http://dx.doi.org/10.1063/1.4914354
Identification Number: doi:10.1063/1.4914354
Funders: We thank Lam Research AG (Villach, Austria) for the financial support.
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