Türck, Johannes ; Nonnenmacher, Hermann-Josef ; Connor, Paula M. L. ; Siol, Sebastian ; Siepchen, Bastian ; Heimfarth, Jan Peter ; Klein, Andreas ; Jaegermann, Wolfram (2016)
Copper (I) Oxide (Cu2O) based back contact for p-i-n CdTe solar cells.
In: Progress in Photovoltaics: Research and Applications, 24
doi: 10.1002/pip.2782
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
In this paper a promising solution for the notorious problem of manufacturing a stable low ohmic back contact of a CdTe thin film superstrate solar cell is presented without using elemental copper. Instead we have used a Cu2O layer inserted between the CdTe absorber and metal contact (Au). In contrast to the barrier free band alignment gained by using the transitivity rules, XPS measurements show a barrier in the valence band of the Cu2O layers directly after deposition, which results in a low performing JV curve. The contact can be improved by a short thermal treatment resulting in efficiencies superior to copper based contacts for standard CdS/CdTe hetero junction solar cells prepared on commercial glass/FTO substrates. By replacing the CdS window layer with a CdS:O buffer layer efficiencies of >15% could be achieved.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2016 |
| Autor(en): | Türck, Johannes ; Nonnenmacher, Hermann-Josef ; Connor, Paula M. L. ; Siol, Sebastian ; Siepchen, Bastian ; Heimfarth, Jan Peter ; Klein, Andreas ; Jaegermann, Wolfram |
| Art des Eintrags: | Bibliographie |
| Titel: | Copper (I) Oxide (Cu2O) based back contact for p-i-n CdTe solar cells |
| Sprache: | Englisch |
| Publikationsjahr: | 2016 |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Progress in Photovoltaics: Research and Applications |
| Jahrgang/Volume einer Zeitschrift: | 24 |
| DOI: | 10.1002/pip.2782 |
| Kurzbeschreibung (Abstract): | In this paper a promising solution for the notorious problem of manufacturing a stable low ohmic back contact of a CdTe thin film superstrate solar cell is presented without using elemental copper. Instead we have used a Cu2O layer inserted between the CdTe absorber and metal contact (Au). In contrast to the barrier free band alignment gained by using the transitivity rules, XPS measurements show a barrier in the valence band of the Cu2O layers directly after deposition, which results in a low performing JV curve. The contact can be improved by a short thermal treatment resulting in efficiencies superior to copper based contacts for standard CdS/CdTe hetero junction solar cells prepared on commercial glass/FTO substrates. By replacing the CdS window layer with a CdS:O buffer layer efficiencies of >15% could be achieved. |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Oberflächenforschung |
| Hinterlegungsdatum: | 12 Mai 2016 13:33 |
| Letzte Änderung: | 28 Aug 2016 15:06 |
| PPN: | |
| Export: | |
| Suche nach Titel in: | TUfind oder in Google |
 |
Frage zum Eintrag |
Optionen (nur für Redakteure)
 |
Redaktionelle Details anzeigen |
Drucken
Impressum