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Functional Interfaces for Transparent Organic Electronic Devices: Consistent Description of Charge Injection by Combining In Situ XPS and Current Voltage Measurements with Self-Consistent Modeling

Gassmann, Jürgen and Yampolskii, Sergey V. and Genenko, Yuri A. and Reusch, Thilo C.G. and Klein, Andreas (2016):
Functional Interfaces for Transparent Organic Electronic Devices: Consistent Description of Charge Injection by Combining In Situ XPS and Current Voltage Measurements with Self-Consistent Modeling.
In: The Journal of Physical Chemistry C, pp. 10466-10475, 120, (19), ISSN 1932-7447,
[Online-Edition: http://dx.doi.org/10.1021/acs.jpcc.6b02567],
[Article]

Abstract

The interface properties between Sn-doped In2O3 (ITO) and the organic semiconductor α-NPD are studied using in situ X-ray and ultraviolet photoelectron spectroscopy (XPS, UPS) as well as with in situ current−voltage analysis in combination transport simulations using a self-consistent mean field model. In particular, ITO is sputtered onto α-NPD as required for transparent or inverted organic light-emitting diodes. We identify deposition conditions, which leave the organic molecules intact. The barrier heights determined by XPS/UPS for the inverted interfaces between undoped and doped α-NPD and ITO are 1.0 and 1.1 eV, respectively. These are in good agreement with barrier heights extracted from current−voltage simulations if the band width of the highest occupied molecular orbital (HOMO) is taken into account. The HOMO bandwidth determined by UPS is σUPS = 0.22 eV and that derived from simulations is σsim = 0.23 eV.

Item Type: Article
Erschienen: 2016
Creators: Gassmann, Jürgen and Yampolskii, Sergey V. and Genenko, Yuri A. and Reusch, Thilo C.G. and Klein, Andreas
Title: Functional Interfaces for Transparent Organic Electronic Devices: Consistent Description of Charge Injection by Combining In Situ XPS and Current Voltage Measurements with Self-Consistent Modeling
Language: English
Abstract:

The interface properties between Sn-doped In2O3 (ITO) and the organic semiconductor α-NPD are studied using in situ X-ray and ultraviolet photoelectron spectroscopy (XPS, UPS) as well as with in situ current−voltage analysis in combination transport simulations using a self-consistent mean field model. In particular, ITO is sputtered onto α-NPD as required for transparent or inverted organic light-emitting diodes. We identify deposition conditions, which leave the organic molecules intact. The barrier heights determined by XPS/UPS for the inverted interfaces between undoped and doped α-NPD and ITO are 1.0 and 1.1 eV, respectively. These are in good agreement with barrier heights extracted from current−voltage simulations if the band width of the highest occupied molecular orbital (HOMO) is taken into account. The HOMO bandwidth determined by UPS is σUPS = 0.22 eV and that derived from simulations is σsim = 0.23 eV.

Journal or Publication Title: The Journal of Physical Chemistry C
Volume: 120
Number: 19
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Materials Modelling
11 Department of Materials and Earth Sciences > Material Science > Surface Science
Date Deposited: 12 May 2016 12:31
Official URL: http://dx.doi.org/10.1021/acs.jpcc.6b02567
Identification Number: doi:10.1021/acs.jpcc.6b02567
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