Gassmann, Jürgen ; Yampolskii, Sergey V. ; Genenko, Yuri A. ; Reusch, Thilo C. G. ; Klein, Andreas (2016)
Functional Interfaces for Transparent Organic Electronic Devices: Consistent Description of Charge Injection by Combining In Situ XPS and Current Voltage Measurements with Self-Consistent Modeling.
In: The Journal of Physical Chemistry C, 120 (19)
doi: 10.1021/acs.jpcc.6b02567
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
The interface properties between Sn-doped In2O3 (ITO) and the organic semiconductor α-NPD are studied using in situ X-ray and ultraviolet photoelectron spectroscopy (XPS, UPS) as well as with in situ current−voltage analysis in combination transport simulations using a self-consistent mean field model. In particular, ITO is sputtered onto α-NPD as required for transparent or inverted organic light-emitting diodes. We identify deposition conditions, which leave the organic molecules intact. The barrier heights determined by XPS/UPS for the inverted interfaces between undoped and doped α-NPD and ITO are 1.0 and 1.1 eV, respectively. These are in good agreement with barrier heights extracted from current−voltage simulations if the band width of the highest occupied molecular orbital (HOMO) is taken into account. The HOMO bandwidth determined by UPS is σUPS = 0.22 eV and that derived from simulations is σsim = 0.23 eV.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2016 |
| Autor(en): | Gassmann, Jürgen ; Yampolskii, Sergey V. ; Genenko, Yuri A. ; Reusch, Thilo C. G. ; Klein, Andreas |
| Art des Eintrags: | Bibliographie |
| Titel: | Functional Interfaces for Transparent Organic Electronic Devices: Consistent Description of Charge Injection by Combining In Situ XPS and Current Voltage Measurements with Self-Consistent Modeling |
| Sprache: | Englisch |
| Publikationsjahr: | 27 April 2016 |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | The Journal of Physical Chemistry C |
| Jahrgang/Volume einer Zeitschrift: | 120 |
| (Heft-)Nummer: | 19 |
| DOI: | 10.1021/acs.jpcc.6b02567 |
| Kurzbeschreibung (Abstract): | The interface properties between Sn-doped In2O3 (ITO) and the organic semiconductor α-NPD are studied using in situ X-ray and ultraviolet photoelectron spectroscopy (XPS, UPS) as well as with in situ current−voltage analysis in combination transport simulations using a self-consistent mean field model. In particular, ITO is sputtered onto α-NPD as required for transparent or inverted organic light-emitting diodes. We identify deposition conditions, which leave the organic molecules intact. The barrier heights determined by XPS/UPS for the inverted interfaces between undoped and doped α-NPD and ITO are 1.0 and 1.1 eV, respectively. These are in good agreement with barrier heights extracted from current−voltage simulations if the band width of the highest occupied molecular orbital (HOMO) is taken into account. The HOMO bandwidth determined by UPS is σUPS = 0.22 eV and that derived from simulations is σsim = 0.23 eV. |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Materialmodellierung 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Oberflächenforschung |
| Hinterlegungsdatum: | 12 Mai 2016 12:31 |
| Letzte Änderung: | 17 Jan 2022 11:14 |
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