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Effect of p-NiO Interlayer on Internal Quantum Efficiency of p-GaN/n-ZnO Light-Emitting Devices

Sirkeli, Vadim P. and Yilmazoglu, Oktay and Küppers, Franko and Hartnagel, Hans L. (2015):
Effect of p-NiO Interlayer on Internal Quantum Efficiency of p-GaN/n-ZnO Light-Emitting Devices.
9, In: Journal of Nanoelectronics and Optoelectronics, (6), pp. 811-818, [Online-Edition: http://dx.doi.org/10.1166/jno.2014.1687],
[Article]

Item Type: Article
Erschienen: 2015
Creators: Sirkeli, Vadim P. and Yilmazoglu, Oktay and Küppers, Franko and Hartnagel, Hans L.
Title: Effect of p-NiO Interlayer on Internal Quantum Efficiency of p-GaN/n-ZnO Light-Emitting Devices
Language: English
Journal or Publication Title: Journal of Nanoelectronics and Optoelectronics
Volume: 9
Number: 6
Uncontrolled Keywords: GALLIUM NITRIDE; INTERNAL QUANTUM EFFICIENCY; LIGHT-EMITTING DIODE; NICKEL OXIDE; ZINC OXIDE
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Höchstfrequenzelektronik
18 Department of Electrical Engineering and Information Technology > Microwave Electronics
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics > Photonics and Optical Communications
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics
Date Deposited: 23 Mar 2016 07:59
Official URL: http://dx.doi.org/10.1166/jno.2014.1687
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