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Effect of p-NiO and n-ZnSe interlayers on the efficiency of p-GaN/n-ZnO light-emitting diode structures

Sirkeli, Vadim P. and Yilmazoglu, Oktay and Küppers, Franko and Hartnagel, Hans L. (2015):
Effect of p-NiO and n-ZnSe interlayers on the efficiency of p-GaN/n-ZnO light-emitting diode structures.
In: Semiconductor Science and Technology, pp. 1-19, 30, (065005), ISSN 0268-1242, [Online-Edition: http://dx.doi.org/10.1088/0268-1242/30/6/065005],
[Article]

Item Type: Article
Erschienen: 2015
Creators: Sirkeli, Vadim P. and Yilmazoglu, Oktay and Küppers, Franko and Hartnagel, Hans L.
Title: Effect of p-NiO and n-ZnSe interlayers on the efficiency of p-GaN/n-ZnO light-emitting diode structures
Language: English
Journal or Publication Title: Semiconductor Science and Technology
Volume: 30
Number: 065005
Divisions: 18 Department of Electrical Engineering and Information Technology > Höchstfrequenzelektronik
18 Department of Electrical Engineering and Information Technology > Microwave Electronics
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics > Photonics and Optical Communications
18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics
Date Deposited: 22 Mar 2016 13:54
Official URL: http://dx.doi.org/10.1088/0268-1242/30/6/065005
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