Preis, S. and Wiens, A. and Wolff, N. and Jakoby, R. and Heinrich, W. and Bengtsson, O. (2015):
Frequency-agile packaged GaN-HEMT using MIM thickfilm BST varactors.
pp. 440-443, Microwave Integrated Circuits Conference (EuMIC), 2015 10th European, [Conference or Workshop Item]
Official URL: http://dx.doi.org/10.1109/EuMIC.2015.7345164
Item Type: | Conference or Workshop Item |
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Erschienen: | 2015 |
Creators: | Preis, S. and Wiens, A. and Wolff, N. and Jakoby, R. and Heinrich, W. and Bengtsson, O. |
Title: | Frequency-agile packaged GaN-HEMT using MIM thickfilm BST varactors |
Language: | German |
Uncontrolled Keywords: | III-V semiconductors;MIM devices;barium compounds;gallium compounds;high electron mobility transistors;radiocommunication;strontium compounds;thick film devices;varactors;wide band gap semiconductors;BaSrTi;HEMT;MIM thick film;MIM varactors;frequency-agile transistor module;modulated-signal measurements;thermal cycling;voltage 400 V;wireless communication systems;Impedance;Linearity;Radio frequency;Temperature measurement;Transistors;Tuning;Varactors;BST;power transistors;tunable devices;varactors |
Divisions: | 18 Department of Electrical Engineering and Information Technology 18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics > Microwave Engineering 18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics |
Event Title: | Microwave Integrated Circuits Conference (EuMIC), 2015 10th European |
Date Deposited: | 21 Mar 2016 11:59 |
Official URL: | http://dx.doi.org/10.1109/EuMIC.2015.7345164 |
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