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Silicon CMOS Compatible In-situ CCVD Growth of Graphene on Silicon Nitride

Noll, Dennis and Schwalke, Udo (2015):
Silicon CMOS Compatible In-situ CCVD Growth of Graphene on Silicon Nitride.
In: 10th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), [Online-Edition: http://dx.doi.org/10.1109/DTIS.2015.7127387],
[Article]

Item Type: Article
Erschienen: 2015
Creators: Noll, Dennis and Schwalke, Udo
Title: Silicon CMOS Compatible In-situ CCVD Growth of Graphene on Silicon Nitride
Language: English
Journal or Publication Title: 10th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS)
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics
Event Title: 10th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS)
Event Location: Naples, Italy
Event Dates: 21.-23.04.2015
Date Deposited: 21 Mar 2016 09:05
Official URL: http://dx.doi.org/10.1109/DTIS.2015.7127387
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