Wang, Jian-Jun ; Huang, Hou-Bing ; Bayer, Thorsten J. M. ; Moballegh, Ali ; Cao, Ye ; Klein, Andreas ; Dickey, Elizabeth C. ; Irving, Douglas L. ; Randall, Clive A. ; Chen, Long-Qing (2016)
Defect chemistry and resistance degradation in Fe-doped SrTiO3 single crystal.
In: Acta Materialia, 108
doi: 10.1016/j.actamat.2016.02.022
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
Defect chemistry and transport in Fe-doped SrTiO3 single crystal are studied to understand its resistance degradation mechanism. The temporal evolution of electric conductivity under a voltage stress was obtained computationally by solving the transport equations for ionic and electronic defects coupled with the defect reaction equilibrium equations. The computational results are compared to the corresponding experimental measurement under similar conditions. It is shown that the local electron and hole concentrations are controlled by the local electronic defect equilibria rather than by their quasi-steady state diffusional transport. It is the electric field-induced migration of oxygen vacancies and the subsequent instantaneous reestablishment of the local defect equilibria that lead to the resistance degradation. The resistance degradation behavior and the defect distributions under a long-term voltage stress are strongly influenced by the sample-annealing oxygen partial pressure, degrading electric field, and temperature. The present study contributes to the understanding of resistance degradation mechanism and provides guidance to improve the lifetime and reliability of wide band-gap semiconducting capacitors.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2016 |
| Autor(en): | Wang, Jian-Jun ; Huang, Hou-Bing ; Bayer, Thorsten J. M. ; Moballegh, Ali ; Cao, Ye ; Klein, Andreas ; Dickey, Elizabeth C. ; Irving, Douglas L. ; Randall, Clive A. ; Chen, Long-Qing |
| Art des Eintrags: | Bibliographie |
| Titel: | Defect chemistry and resistance degradation in Fe-doped SrTiO3 single crystal |
| Sprache: | Englisch |
| Publikationsjahr: | 2016 |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Acta Materialia |
| Jahrgang/Volume einer Zeitschrift: | 108 |
| DOI: | 10.1016/j.actamat.2016.02.022 |
| Kurzbeschreibung (Abstract): | Defect chemistry and transport in Fe-doped SrTiO3 single crystal are studied to understand its resistance degradation mechanism. The temporal evolution of electric conductivity under a voltage stress was obtained computationally by solving the transport equations for ionic and electronic defects coupled with the defect reaction equilibrium equations. The computational results are compared to the corresponding experimental measurement under similar conditions. It is shown that the local electron and hole concentrations are controlled by the local electronic defect equilibria rather than by their quasi-steady state diffusional transport. It is the electric field-induced migration of oxygen vacancies and the subsequent instantaneous reestablishment of the local defect equilibria that lead to the resistance degradation. The resistance degradation behavior and the defect distributions under a long-term voltage stress are strongly influenced by the sample-annealing oxygen partial pressure, degrading electric field, and temperature. The present study contributes to the understanding of resistance degradation mechanism and provides guidance to improve the lifetime and reliability of wide band-gap semiconducting capacitors. |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Oberflächenforschung |
| Hinterlegungsdatum: | 11 Mär 2016 15:47 |
| Letzte Änderung: | 11 Mär 2016 15:47 |
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