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Defect chemistry and resistance degradation in Fe-doped SrTiO3 single crystal

Wang, Jian-Jun and Huang, Hou-Bing and Bayer, Thorsten J. M. and Moballegh, Ali and Cao, Ye and Klein, Andreas and Dickey, Elizabeth C. and Irving, Douglas L. and Randall, Clive A. and Chen, Long-Qing (2016):
Defect chemistry and resistance degradation in Fe-doped SrTiO3 single crystal.
108, In: Acta Materialia, pp. 229-240. ISSN 13596454,
[Article]

Abstract

Defect chemistry and transport in Fe-doped SrTiO3 single crystal are studied to understand its resistance degradation mechanism. The temporal evolution of electric conductivity under a voltage stress was obtained computationally by solving the transport equations for ionic and electronic defects coupled with the defect reaction equilibrium equations. The computational results are compared to the corresponding experimental measurement under similar conditions. It is shown that the local electron and hole concentrations are controlled by the local electronic defect equilibria rather than by their quasi-steady state diffusional transport. It is the electric field-induced migration of oxygen vacancies and the subsequent instantaneous reestablishment of the local defect equilibria that lead to the resistance degradation. The resistance degradation behavior and the defect distributions under a long-term voltage stress are strongly influenced by the sample-annealing oxygen partial pressure, degrading electric field, and temperature. The present study contributes to the understanding of resistance degradation mechanism and provides guidance to improve the lifetime and reliability of wide band-gap semiconducting capacitors.

Item Type: Article
Erschienen: 2016
Creators: Wang, Jian-Jun and Huang, Hou-Bing and Bayer, Thorsten J. M. and Moballegh, Ali and Cao, Ye and Klein, Andreas and Dickey, Elizabeth C. and Irving, Douglas L. and Randall, Clive A. and Chen, Long-Qing
Title: Defect chemistry and resistance degradation in Fe-doped SrTiO3 single crystal
Language: English
Abstract:

Defect chemistry and transport in Fe-doped SrTiO3 single crystal are studied to understand its resistance degradation mechanism. The temporal evolution of electric conductivity under a voltage stress was obtained computationally by solving the transport equations for ionic and electronic defects coupled with the defect reaction equilibrium equations. The computational results are compared to the corresponding experimental measurement under similar conditions. It is shown that the local electron and hole concentrations are controlled by the local electronic defect equilibria rather than by their quasi-steady state diffusional transport. It is the electric field-induced migration of oxygen vacancies and the subsequent instantaneous reestablishment of the local defect equilibria that lead to the resistance degradation. The resistance degradation behavior and the defect distributions under a long-term voltage stress are strongly influenced by the sample-annealing oxygen partial pressure, degrading electric field, and temperature. The present study contributes to the understanding of resistance degradation mechanism and provides guidance to improve the lifetime and reliability of wide band-gap semiconducting capacitors.

Journal or Publication Title: Acta Materialia
Volume: 108
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Surface Science
Date Deposited: 11 Mar 2016 15:47
Official URL: http://dx.doi.org/10.1016/j.actamat.2016.02.022
Identification Number: doi:10.1016/j.actamat.2016.02.022
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