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Ink-Jet Printed CMOS Electronics from Oxide Semiconductors

Garlapati, Suresh Kumar ; Baby, Tessy Theres ; Dehm, Simone ; Hammad, Mohammed ; Chakravadhanula, Venkata Sai Kiran ; Kruk, Robert ; Hahn, Horst ; Dasgupta, Subho (2015)
Ink-Jet Printed CMOS Electronics from Oxide Semiconductors.
In: Small, 11 (29)
doi: 10.1002/smll.201403288
Artikel, Bibliographie

Kurzbeschreibung (Abstract)

Complementary metal oxide semiconductor (CMOS) technology with high transconductance and signal gain is mandatory for practicable digital/analog logic electronics. However, high performance all-oxide CMOS logics are scarcely reported in the literature; specifically, not at all for solution-processed/printed transistors. As a major step toward solution-processed all-oxide electronics, here it is shown that using a highly efficient electrolyte-gating approach one can obtain printed and low-voltage operated oxide CMOS logics with high signal gain (approximate to 21 at a supply voltage of only 1.5 V) and low static power dissipation.

Typ des Eintrags: Artikel
Erschienen: 2015
Autor(en): Garlapati, Suresh Kumar ; Baby, Tessy Theres ; Dehm, Simone ; Hammad, Mohammed ; Chakravadhanula, Venkata Sai Kiran ; Kruk, Robert ; Hahn, Horst ; Dasgupta, Subho
Art des Eintrags: Bibliographie
Titel: Ink-Jet Printed CMOS Electronics from Oxide Semiconductors
Sprache: Englisch
Publikationsjahr: 5 August 2015
Verlag: WILEY-V C H VERLAG GMBH, WEINHEIM, GERMANY
Titel der Zeitschrift, Zeitung oder Schriftenreihe: Small
Jahrgang/Volume einer Zeitschrift: 11
(Heft-)Nummer: 29
DOI: 10.1002/smll.201403288
Kurzbeschreibung (Abstract):

Complementary metal oxide semiconductor (CMOS) technology with high transconductance and signal gain is mandatory for practicable digital/analog logic electronics. However, high performance all-oxide CMOS logics are scarcely reported in the literature; specifically, not at all for solution-processed/printed transistors. As a major step toward solution-processed all-oxide electronics, here it is shown that using a highly efficient electrolyte-gating approach one can obtain printed and low-voltage operated oxide CMOS logics with high signal gain (approximate to 21 at a supply voltage of only 1.5 V) and low static power dissipation.

Freie Schlagworte: electrolyte gating, ink-jet printing, oxide semiconductors, printed electronics
Fachbereich(e)/-gebiet(e): 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Gemeinschaftslabor Nanomaterialien
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft
11 Fachbereich Material- und Geowissenschaften
Hinterlegungsdatum: 04 Feb 2016 09:51
Letzte Änderung: 04 Feb 2016 09:51
PPN:
Sponsoren: Moreover, the authors like to acknowledge the financial support by Helmholtz Gemeinschaft in the form of Helmholtz Virtual Institute VI-530., The financial support to the Joint Research Laboratory Nanomaterials by the State of Hesse is also gratefully acknowledged.
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