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Comparative study of sputter-deposited SnO2 films doped with antimony or tantalum

Weidner, Mirko and Jia, Junjun and Shigesato, Yuzo and Klein, Andreas (2016):
Comparative study of sputter-deposited SnO2 films doped with antimony or tantalum.
In: physica status solidi (b), pp. 923-928, 253, (5), ISSN 03701972, [Online-Edition: http://dx.doi.org/10.1002/pssb.201552720],
[Article]

Abstract

SnO2 films doped with antimony or tantalum were sputterdeposited for comparison, using an identical set of parameters. The influence of dopant concentration and choice of deposition parameters such as substrate temperature on the optoelectronic properties, especially film resistivity, were determined. Comparative analysis shows that tantalum doping yields lower film resistivity, probably due to an increased inhibiting influence of grain boundary scattering in the case of antimony doping. Sputter-deposited tantalum-doped films with lower than previously achieved resistivity 5.4 × 10−4 Wcm, carrier density 4.5 × 1020 cm−3, and mobility 25.7 cm2 Vs−1 are reported, while maintaining optical transmittance above 85% at a film thickness 400 nm. Ta/Sb co-doped thin films were synthesized for the first time, achieving similar results.

Item Type: Article
Erschienen: 2016
Creators: Weidner, Mirko and Jia, Junjun and Shigesato, Yuzo and Klein, Andreas
Title: Comparative study of sputter-deposited SnO2 films doped with antimony or tantalum
Language: English
Abstract:

SnO2 films doped with antimony or tantalum were sputterdeposited for comparison, using an identical set of parameters. The influence of dopant concentration and choice of deposition parameters such as substrate temperature on the optoelectronic properties, especially film resistivity, were determined. Comparative analysis shows that tantalum doping yields lower film resistivity, probably due to an increased inhibiting influence of grain boundary scattering in the case of antimony doping. Sputter-deposited tantalum-doped films with lower than previously achieved resistivity 5.4 × 10−4 Wcm, carrier density 4.5 × 1020 cm−3, and mobility 25.7 cm2 Vs−1 are reported, while maintaining optical transmittance above 85% at a film thickness 400 nm. Ta/Sb co-doped thin films were synthesized for the first time, achieving similar results.

Journal or Publication Title: physica status solidi (b)
Volume: 253
Number: 5
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Surface Science
Date Deposited: 02 Feb 2016 15:53
Official URL: http://dx.doi.org/10.1002/pssb.201552720
Identification Number: doi:10.1002/pssb.201552720
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