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Broadband THz detection from 0.1 to 22 THz with large area field-effect transistors

Regensburger, Stefan and Mittendorff, Martin and Winnerl, Stephan and Lu, Hong and Gossard, Arthur C. and Preu, Sascha (2015):
Broadband THz detection from 0.1 to 22 THz with large area field-effect transistors.
In: Optics Express, OSA, pp. 20732-20742, 23, (16), ISSN 1094-4087,
[Online-Edition: http://dx.doi.org/10.1364/OE.23.020732],
[Article]

Abstract

We report on ultrafast detection of radiation between 100 GHz and 22 THz by field-effect transistors in a large area configuration. With the exception of the Reststrahlenband of GaAs, the spectral coverage of the GaAs-based detectors is more than two orders of magnitude, covering the entire THz range (100 GHz - 10 THz). The temporal resolution of the robust devices is yet limited by the 30 GHz oscilloscope used for read out. The responsivity roll-off towards higher frequencies is weaker than expected from an RC-roll-off model. Terahertz pulses with peak powers of up to 65kW have been recorded without damaging the devices.

Item Type: Article
Erschienen: 2015
Creators: Regensburger, Stefan and Mittendorff, Martin and Winnerl, Stephan and Lu, Hong and Gossard, Arthur C. and Preu, Sascha
Title: Broadband THz detection from 0.1 to 22 THz with large area field-effect transistors
Language: English
Abstract:

We report on ultrafast detection of radiation between 100 GHz and 22 THz by field-effect transistors in a large area configuration. With the exception of the Reststrahlenband of GaAs, the spectral coverage of the GaAs-based detectors is more than two orders of magnitude, covering the entire THz range (100 GHz - 10 THz). The temporal resolution of the robust devices is yet limited by the 30 GHz oscilloscope used for read out. The responsivity roll-off towards higher frequencies is weaker than expected from an RC-roll-off model. Terahertz pulses with peak powers of up to 65kW have been recorded without damaging the devices.

Journal or Publication Title: Optics Express
Volume: 23
Number: 16
Publisher: OSA
Uncontrolled Keywords: Free-electron lasers (FELs); Detectors; Optoelectronics; Ultrafast devices; Far infrared or terahertz; Laser beam characterization; FET; THz;
Divisions: 18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics > Terahertz Systems Technology
18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics
Date Deposited: 04 Aug 2015 08:25
Official URL: http://dx.doi.org/10.1364/OE.23.020732
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