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Broadband THz detection from 0.1 to 22 THz with large area field-effect transistors

Regensburger, Stefan ; Mittendorff, Martin ; Winnerl, Stephan ; Lu, Hong ; Gossard, Arthur C. ; Preu, Sascha (2015)
Broadband THz detection from 0.1 to 22 THz with large area field-effect transistors.
In: Optics Express, 23 (16)
Artikel, Bibliographie

Kurzbeschreibung (Abstract)

We report on ultrafast detection of radiation between 100 GHz and 22 THz by field-effect transistors in a large area configuration. With the exception of the Reststrahlenband of GaAs, the spectral coverage of the GaAs-based detectors is more than two orders of magnitude, covering the entire THz range (100 GHz - 10 THz). The temporal resolution of the robust devices is yet limited by the 30 GHz oscilloscope used for read out. The responsivity roll-off towards higher frequencies is weaker than expected from an RC-roll-off model. Terahertz pulses with peak powers of up to 65kW have been recorded without damaging the devices.

Typ des Eintrags: Artikel
Erschienen: 2015
Autor(en): Regensburger, Stefan ; Mittendorff, Martin ; Winnerl, Stephan ; Lu, Hong ; Gossard, Arthur C. ; Preu, Sascha
Art des Eintrags: Bibliographie
Titel: Broadband THz detection from 0.1 to 22 THz with large area field-effect transistors
Sprache: Englisch
Publikationsjahr: August 2015
Verlag: OSA
Titel der Zeitschrift, Zeitung oder Schriftenreihe: Optics Express
Jahrgang/Volume einer Zeitschrift: 23
(Heft-)Nummer: 16
URL / URN: http://dx.doi.org/10.1364/OE.23.020732
Kurzbeschreibung (Abstract):

We report on ultrafast detection of radiation between 100 GHz and 22 THz by field-effect transistors in a large area configuration. With the exception of the Reststrahlenband of GaAs, the spectral coverage of the GaAs-based detectors is more than two orders of magnitude, covering the entire THz range (100 GHz - 10 THz). The temporal resolution of the robust devices is yet limited by the 30 GHz oscilloscope used for read out. The responsivity roll-off towards higher frequencies is weaker than expected from an RC-roll-off model. Terahertz pulses with peak powers of up to 65kW have been recorded without damaging the devices.

Freie Schlagworte: Free-electron lasers (FELs); Detectors; Optoelectronics; Ultrafast devices; Far infrared or terahertz; Laser beam characterization; FET; THz;
Fachbereich(e)/-gebiet(e): 18 Fachbereich Elektrotechnik und Informationstechnik
18 Fachbereich Elektrotechnik und Informationstechnik > Institut für Mikrowellentechnik und Photonik (IMP)
18 Fachbereich Elektrotechnik und Informationstechnik > Institut für Mikrowellentechnik und Photonik (IMP) > THz Bauelemente und THz Systeme
18 Fachbereich Elektrotechnik und Informationstechnik > Institut für Mikrowellentechnik und Photonik (IMP) > Terahertz Systems
Hinterlegungsdatum: 04 Aug 2015 08:25
Letzte Änderung: 10 Dez 2021 07:13
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