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Silicon carbonitride ceramics derived from polysilazanes. Part 2: Investigation of electrical properties

Haluschka, Christoph ; Engel, C. ; Riedel, R. :
Silicon carbonitride ceramics derived from polysilazanes. Part 2: Investigation of electrical properties.
In: Journal of the European Ceramic Society, 20 (9) pp. 1365-1374.
[Artikel], (2000)

Kurzbeschreibung (Abstract)

Electrical properties such as d.c.- and a.c.-conductivity, permittivity as well as thermopower of polysilazane-derived silicon carbonitride ceramics were studied depending on the pyrolysis conditions and subsequent annealing. The electrical properties were analysed to be extremely sensitive with respect to variations of the chemical composition, the solid state structure and the microstructure of the Si–C–N materials. Therefore, electrical investigations can be an important tool for the non-destructive characterisation of novel multicomponent carbide-nitride-based ceramics. In particular the d.c.-conductivity can be controlled within 15 orders of magnitude by (i) temperature, (ii) atmosphere and (iii) annealing time applied during synthesis. The main mechanism, which is proposed for the transport of charge carriers in the amorphous, highly disordered silicon carbonitride is the tunnelling of large polarons. In contrast, the electrical conductivity of the crystallised SiC/Si3N4-counterpart is dominated by the transport of electrons in the conduction band of nitrogen doped SiC particles.

Typ des Eintrags: Artikel
Erschienen: 2000
Autor(en): Haluschka, Christoph ; Engel, C. ; Riedel, R.
Titel: Silicon carbonitride ceramics derived from polysilazanes. Part 2: Investigation of electrical properties
Sprache: Englisch
Kurzbeschreibung (Abstract):

Electrical properties such as d.c.- and a.c.-conductivity, permittivity as well as thermopower of polysilazane-derived silicon carbonitride ceramics were studied depending on the pyrolysis conditions and subsequent annealing. The electrical properties were analysed to be extremely sensitive with respect to variations of the chemical composition, the solid state structure and the microstructure of the Si–C–N materials. Therefore, electrical investigations can be an important tool for the non-destructive characterisation of novel multicomponent carbide-nitride-based ceramics. In particular the d.c.-conductivity can be controlled within 15 orders of magnitude by (i) temperature, (ii) atmosphere and (iii) annealing time applied during synthesis. The main mechanism, which is proposed for the transport of charge carriers in the amorphous, highly disordered silicon carbonitride is the tunnelling of large polarons. In contrast, the electrical conductivity of the crystallised SiC/Si3N4-counterpart is dominated by the transport of electrons in the conduction band of nitrogen doped SiC particles.

Titel der Zeitschrift, Zeitung oder Schriftenreihe: Journal of the European Ceramic Society
Band: 20
(Heft-)Nummer: 9
Verlag: Elsevier
Freie Schlagworte: Electrical conductivity, Electrical properties, Impedance, Spectroscopy, Si-C–N, Thermopower
Fachbereich(e)/-gebiet(e): Fachbereich Material- und Geowissenschaften > Materialwissenschaften > Disperse Feststoffe, Dispersive Solids
Fachbereich Material- und Geowissenschaften > Materialwissenschaften
Fachbereich Material- und Geowissenschaften
Hinterlegungsdatum: 19 Nov 2008 16:03
Sponsoren: This study has been performed under the project Ri 510-5/1 “Elektronische Eigenschaften neuer amorpher und nanokristalliner Keramiken”, supported by the Deutsche Forschungsgemeinschaft, Bonn, Germany., R.R. gratefully acknowledges the financial support by the Fonds der Chemischen Industrie, Frankfurt, Germany.
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