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Atomic-scale assessment of the crystallization onset in silicon carbonitride

Mera, Gabriela and Ishikawa, Ryo and Ionescu, Emanuel and Ikuhara, Yuichi and Riedel, Ralf (2015):
Atomic-scale assessment of the crystallization onset in silicon carbonitride.
In: Journal of the European Ceramic Society, Elsevier Science Publishing, pp. 3355-3362, 35, (12), ISSN 09552219, [Online-Edition: http://dx.doi.org/10.1016/j.jeurceramsoc.2015.01.008],
[Article]

Abstract

Within the present study, atomic-scale electron microscopy investigation on the crystallization behavior of polysilylcarbodiimide-derived SiCN was performed. The as-prepared SiCN sample was found to be homogeneous and consisted of amorphous silicon nitride nano-domains dispersed within an amorphous, highly entangled graphene-like carbon matrix. Annealing of the sample at 1400 °C induced a slight increase of the ordering of the carbon phase. Additionally, the crystallization onset of the silicon nitride has been observed for the first time. In the sample annealed at 1400 °C small nano-clusters with average sizes of 0.8, 1.5 and 2.1 nm (consisting of 30, 180 and 570 atoms, respectively; corresponding to Si12N18, Si72N108 and Si228N342) were imaged and assigned to α-silicon nitride. The crystallization of the amorphous silicon nitride phase into α-Si3N4 is thought to occur via diffusion of Si and N, which rely on the presence of large number of dangling bonds in the amorphous SiCN sample.

Item Type: Article
Erschienen: 2015
Creators: Mera, Gabriela and Ishikawa, Ryo and Ionescu, Emanuel and Ikuhara, Yuichi and Riedel, Ralf
Title: Atomic-scale assessment of the crystallization onset in silicon carbonitride
Language: English
Abstract:

Within the present study, atomic-scale electron microscopy investigation on the crystallization behavior of polysilylcarbodiimide-derived SiCN was performed. The as-prepared SiCN sample was found to be homogeneous and consisted of amorphous silicon nitride nano-domains dispersed within an amorphous, highly entangled graphene-like carbon matrix. Annealing of the sample at 1400 °C induced a slight increase of the ordering of the carbon phase. Additionally, the crystallization onset of the silicon nitride has been observed for the first time. In the sample annealed at 1400 °C small nano-clusters with average sizes of 0.8, 1.5 and 2.1 nm (consisting of 30, 180 and 570 atoms, respectively; corresponding to Si12N18, Si72N108 and Si228N342) were imaged and assigned to α-silicon nitride. The crystallization of the amorphous silicon nitride phase into α-Si3N4 is thought to occur via diffusion of Si and N, which rely on the presence of large number of dangling bonds in the amorphous SiCN sample.

Journal or Publication Title: Journal of the European Ceramic Society
Volume: 35
Number: 12
Publisher: Elsevier Science Publishing
Uncontrolled Keywords: Silicon carbonitride, Polymer-derived ceramics, Phase separation, Atomic-resolution STEM, EELS
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Dispersive Solids
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
Date Deposited: 22 Jun 2015 10:51
Official URL: http://dx.doi.org/10.1016/j.jeurceramsoc.2015.01.008
Additional Information:

8th International Symposium on Nitrides in Conjunction with the 7th International Workshop on Spinel Nitrides and Related Materials and the Annual Meeting of the Marie Curie ITN 7th Framework Programme FUNEA

Identification Number: doi:10.1016/j.jeurceramsoc.2015.01.008
Funders: Financial support by the grants funded under the MWN (Materials World Network) of the DFG and the National Science Foundation as well as LOEWE-Zentrum AdRIA (Adaptronik – Research, Innovation, Application), funded by the state of Hesse,, Germany is gratefully acknowledged., A part of this study was supported by the Joint Research Project between Japan and Germany through JSPS (Japan Society for the Promotion of Science) Bilateral Program., R.I. also acknowledges support from JSPS Postdoctoral Fellowship for Research Abroad.
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