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Dimensional crossover in ultrathin buried conducting SrVO3 layers

Li, Q.-R. and Major, M. and Yazdi, M. Baghaie and Donner, W. and Dao, V. H. and Mercey, B. and Lüders, U. (2015):
Dimensional crossover in ultrathin buried conducting SrVO3 layers.
In: Physical Review B, APS Publications, 91, (3), ISSN 1098-0121,
[Online-Edition: http://dx.doi.org/10.1103/PhysRevB.91.035420],
[Article]

Abstract

The structure and resistive properties of buried SrVO3 layers between two insulating LaVO3 layers are investigated by varying the thickness of the SrVO3 layers between 3 and 35 monolayers. The thickest SrVO3 layer shows a bulklike metallic behavior, while in the thinnest SrVO3 layer, a weak localization regime is observed below 100 K manifesting a logarithmic temperature dependence. Angular-dependent magnetoresistance measurements indicate a cylindric shape of the Fermi surface, and therefore a two-dimensional transport in the thinnest buried SrVO3 layer. The modification of the charge carrier properties by the reduced thickness of the SrVO3 layer are furthermore underlined by the appearance of a relatively strong positive magnetoresistance under a magnetic field perpendicular to the sample surface. The present study therefore highlights a way to synthesize oxide electrodes with reduced dimension for future oxide electronics application.

Item Type: Article
Erschienen: 2015
Creators: Li, Q.-R. and Major, M. and Yazdi, M. Baghaie and Donner, W. and Dao, V. H. and Mercey, B. and Lüders, U.
Title: Dimensional crossover in ultrathin buried conducting SrVO3 layers
Language: English
Abstract:

The structure and resistive properties of buried SrVO3 layers between two insulating LaVO3 layers are investigated by varying the thickness of the SrVO3 layers between 3 and 35 monolayers. The thickest SrVO3 layer shows a bulklike metallic behavior, while in the thinnest SrVO3 layer, a weak localization regime is observed below 100 K manifesting a logarithmic temperature dependence. Angular-dependent magnetoresistance measurements indicate a cylindric shape of the Fermi surface, and therefore a two-dimensional transport in the thinnest buried SrVO3 layer. The modification of the charge carrier properties by the reduced thickness of the SrVO3 layer are furthermore underlined by the appearance of a relatively strong positive magnetoresistance under a magnetic field perpendicular to the sample surface. The present study therefore highlights a way to synthesize oxide electrodes with reduced dimension for future oxide electronics application.

Journal or Publication Title: Physical Review B
Volume: 91
Number: 3
Publisher: APS Publications
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Advanced Thin Film Technology
11 Department of Materials and Earth Sciences > Material Science > Structure Research
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
Date Deposited: 21 Apr 2015 10:49
Official URL: http://dx.doi.org/10.1103/PhysRevB.91.035420
Identification Number: doi:10.1103/PhysRevB.91.035420
Funders: This work is financially supported by Conseil Régional de Basse Normandie, France and also guided in the framework of the Erasmus-Mundus International Doctoral School in Functional Materials (IDS FunMat).
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