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In Situ Hall Effect Monitoring of Vacuum Annealing of In2O3:H Thin Films

Wardenga, Hans and Frischbier, Mareike and Morales-Masis, Monica and Klein, Andreas (2015):
In Situ Hall Effect Monitoring of Vacuum Annealing of In2O3:H Thin Films.
8, In: Materials, (2), pp. 561-574, ISSN 1996-1944, [Online-Edition: http://dx.doi.org/10.3390/ma8020561],
[Article]

Abstract

Hydrogen doped In2O3 thin films were prepared by room temperature sputter deposition with the addition of H2O to the sputter gas. By subsequent vacuum annealing, the films obtain high mobility up to 90 cm2/Vs. The films were analyzed in situ by X-ray photoelectron spectroscopy (XPS) and ex situ by X-ray diffraction (XRD), optical transmission and Hall effect measurements. Furthermore, we present results from in situ Hall effect measurements during vacuum annealing of In2O3:H films, revealing distinct dependence of carrier concentration and mobility with time at different annealing temperatures. We suggest hydrogen passivation of grain boundaries as the main reason for the high mobility obtained with In2O3:H films.

Item Type: Article
Erschienen: 2015
Creators: Wardenga, Hans and Frischbier, Mareike and Morales-Masis, Monica and Klein, Andreas
Title: In Situ Hall Effect Monitoring of Vacuum Annealing of In2O3:H Thin Films
Language: English
Abstract:

Hydrogen doped In2O3 thin films were prepared by room temperature sputter deposition with the addition of H2O to the sputter gas. By subsequent vacuum annealing, the films obtain high mobility up to 90 cm2/Vs. The films were analyzed in situ by X-ray photoelectron spectroscopy (XPS) and ex situ by X-ray diffraction (XRD), optical transmission and Hall effect measurements. Furthermore, we present results from in situ Hall effect measurements during vacuum annealing of In2O3:H films, revealing distinct dependence of carrier concentration and mobility with time at different annealing temperatures. We suggest hydrogen passivation of grain boundaries as the main reason for the high mobility obtained with In2O3:H films.

Journal or Publication Title: Materials
Volume: 8
Number: 2
Uncontrolled Keywords: H-doped indium oxide; Hall effect; grain boundary passivation; hydrogen; X-ray photoelectron spectroscopy (XPS)
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Surface Science
Zentrale Einrichtungen
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > D - Component properties
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > D - Component properties > Subproject D3: Function and fatigue of oxide electrodes in organic light emitting diodes
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres
DFG-Collaborative Research Centres (incl. Transregio)
Date Deposited: 16 Feb 2015 15:51
Official URL: http://dx.doi.org/10.3390/ma8020561
Additional Information:

SFB 595 D3

Identification Number: doi:10.3390/ma8020561
Funders: The authors acknowledge the funding by the German Science Foundation (DFG) within the Collaborative Research Center on Electrical Fatigue of Functional Materials (SFB 595)
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