Wardenga, Hans ; Frischbier, Mareike ; Morales-Masis, Monica ; Klein, Andreas (2015)
In Situ Hall Effect Monitoring of Vacuum Annealing of In2O3:H Thin Films.
In: Materials, 8 (2)
doi: 10.3390/ma8020561
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
Hydrogen doped In2O3 thin films were prepared by room temperature sputter deposition with the addition of H2O to the sputter gas. By subsequent vacuum annealing, the films obtain high mobility up to 90 cm2/Vs. The films were analyzed in situ by X-ray photoelectron spectroscopy (XPS) and ex situ by X-ray diffraction (XRD), optical transmission and Hall effect measurements. Furthermore, we present results from in situ Hall effect measurements during vacuum annealing of In2O3:H films, revealing distinct dependence of carrier concentration and mobility with time at different annealing temperatures. We suggest hydrogen passivation of grain boundaries as the main reason for the high mobility obtained with In2O3:H films.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2015 |
| Autor(en): | Wardenga, Hans ; Frischbier, Mareike ; Morales-Masis, Monica ; Klein, Andreas |
| Art des Eintrags: | Bibliographie |
| Titel: | In Situ Hall Effect Monitoring of Vacuum Annealing of In2O3:H Thin Films |
| Sprache: | Englisch |
| Publikationsjahr: | 6 Februar 2015 |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Materials |
| Jahrgang/Volume einer Zeitschrift: | 8 |
| (Heft-)Nummer: | 2 |
| DOI: | 10.3390/ma8020561 |
| Kurzbeschreibung (Abstract): | Hydrogen doped In2O3 thin films were prepared by room temperature sputter deposition with the addition of H2O to the sputter gas. By subsequent vacuum annealing, the films obtain high mobility up to 90 cm2/Vs. The films were analyzed in situ by X-ray photoelectron spectroscopy (XPS) and ex situ by X-ray diffraction (XRD), optical transmission and Hall effect measurements. Furthermore, we present results from in situ Hall effect measurements during vacuum annealing of In2O3:H films, revealing distinct dependence of carrier concentration and mobility with time at different annealing temperatures. We suggest hydrogen passivation of grain boundaries as the main reason for the high mobility obtained with In2O3:H films. |
| Freie Schlagworte: | H-doped indium oxide; Hall effect; grain boundary passivation; hydrogen; X-ray photoelectron spectroscopy (XPS) |
| Zusätzliche Informationen: | SFB 595 D3 |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Oberflächenforschung Zentrale Einrichtungen DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung > D - Bauteileigenschaften DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung > D - Bauteileigenschaften > Teilprojekt D3: Funktion und Ermüdung oxidischer Elektroden in organischen Leuchtdioden DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche DFG-Sonderforschungsbereiche (inkl. Transregio) |
| Hinterlegungsdatum: | 16 Feb 2015 15:51 |
| Letzte Änderung: | 12 Mär 2015 09:38 |
| PPN: | |
| Sponsoren: | The authors acknowledge the funding by the German Science Foundation (DFG) within the Collaborative Research Center on Electrical Fatigue of Functional Materials (SFB 595) |
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