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Hydrogen storage in Ti, V and their oxides-based thin films

Tarnawski, Z. and Zakrzewska, K. and Kim-Ngan, N.-T. H. and Krupska, M. and Sowa, S. and Drogowska, K. and Havela, L. and Balogh, A. G. (2015):
Hydrogen storage in Ti, V and their oxides-based thin films.
In: Advances in Natural Sciences: Nanoscience and Nanotechnology, IOP Publishing, pp. 013002, 6, (1), ISSN 2043-6262, [Online-Edition: http://iopscience.iop.org/2043-6262/6/1/013002],
[Article]

Abstract

We have investigated the hydrogen storage ability and the effect of hydrogenation on structure and physical properties of Ti/V and their oxides-based thin films. A series of Ti-TiO2 and VO-TiO2 thin films with different layer structures, geometries and thicknesses have been prepared by the sputtering technique on different (Si(111), SiO2, C) substrates. For the Ti-TiO2-Ti films up to 50 at.% of hydrogen can be stored in the Ti layers, while the hydrogen can penetrate without accumulation through the TiO2 layer. A large hydrogen storage was also found in some V2O5-TiO2 films. Hydrogen could also remove the preferential orientation in the Ti films and induce a transition of V2O5 to VO2 in the films.

Item Type: Article
Erschienen: 2015
Creators: Tarnawski, Z. and Zakrzewska, K. and Kim-Ngan, N.-T. H. and Krupska, M. and Sowa, S. and Drogowska, K. and Havela, L. and Balogh, A. G.
Title: Hydrogen storage in Ti, V and their oxides-based thin films
Language: English
Abstract:

We have investigated the hydrogen storage ability and the effect of hydrogenation on structure and physical properties of Ti/V and their oxides-based thin films. A series of Ti-TiO2 and VO-TiO2 thin films with different layer structures, geometries and thicknesses have been prepared by the sputtering technique on different (Si(111), SiO2, C) substrates. For the Ti-TiO2-Ti films up to 50 at.% of hydrogen can be stored in the Ti layers, while the hydrogen can penetrate without accumulation through the TiO2 layer. A large hydrogen storage was also found in some V2O5-TiO2 films. Hydrogen could also remove the preferential orientation in the Ti films and induce a transition of V2O5 to VO2 in the films.

Journal or Publication Title: Advances in Natural Sciences: Nanoscience and Nanotechnology
Volume: 6
Number: 1
Publisher: IOP Publishing
Divisions: 11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Material Analytics
11 Department of Materials and Earth Sciences
Date Deposited: 27 Jan 2015 14:01
Official URL: http://iopscience.iop.org/2043-6262/6/1/013002
Additional Information:

Invited talk at the 7th International Workshop on Advanced Materials Science and Nanotechnology IWAMSN2014, 2-6 November, 2014, Ha Long, Vietnam.

Funders: We acknowledge the support of the Czech-Polish cooperation by the Czech Ministry of Education (Czech-polish project 7AMB14PL036 (9004/R14/R15)., N-THKN acknowledged the fi nancial support by the European Regional Development Fund under the Infrastructure and Environment Programme.
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