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Modeling of defect accumulation in lithium fluoride crystals under irradiation with swift ions

Sorokin, M. V. and Schwartz, K. and Trautmann, C. and Dauletbekova, A. and El-Said, A. S. (2014):
Modeling of defect accumulation in lithium fluoride crystals under irradiation with swift ions.
In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier Science Publishing, pp. 307-310, 326, ISSN 0168583X, [Online-Edition: http://dx.doi.org/10.1016/j.nimb.2013.10.033],
[Article]

Abstract

In many materials electronic excitations created around the trajectories of swift ions result in defect creation. Experimental observations often yield information on integral damage effects. The presented approach suggests a theoretical model to correlate integral damage results with microscopic effect produced by overlapping of individual single ion tracks. The model is applied to ion-beam induced defects in LiF crystals. Two aspects are treated separately viz. the ion-deposited energy distribution for a given fluence and the material response to the absorbed energy. The first problem is treated within the framework of stochastic superposition of ion tracks, taking into account the radial distribution of the energy transfer of a single ion. For lithium fluoride the creation of color centers is considered as the materials response. The dependence of the defect concentration on the absorbed energy is included in order to obtain the integral defect production.

Item Type: Article
Erschienen: 2014
Creators: Sorokin, M. V. and Schwartz, K. and Trautmann, C. and Dauletbekova, A. and El-Said, A. S.
Title: Modeling of defect accumulation in lithium fluoride crystals under irradiation with swift ions
Language: English
Abstract:

In many materials electronic excitations created around the trajectories of swift ions result in defect creation. Experimental observations often yield information on integral damage effects. The presented approach suggests a theoretical model to correlate integral damage results with microscopic effect produced by overlapping of individual single ion tracks. The model is applied to ion-beam induced defects in LiF crystals. Two aspects are treated separately viz. the ion-deposited energy distribution for a given fluence and the material response to the absorbed energy. The first problem is treated within the framework of stochastic superposition of ion tracks, taking into account the radial distribution of the energy transfer of a single ion. For lithium fluoride the creation of color centers is considered as the materials response. The dependence of the defect concentration on the absorbed energy is included in order to obtain the integral defect production.

Journal or Publication Title: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Volume: 326
Publisher: Elsevier Science Publishing
Uncontrolled Keywords: Ion irradiation, Color centers, Defect accumulation, Absorbed energy
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Ion-Beam-Modified Materials
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
Date Deposited: 12 Jan 2015 12:09
Official URL: http://dx.doi.org/10.1016/j.nimb.2013.10.033
Additional Information:

17th International Conference on Radiation Effects in Insulators (REI)

Identification Number: doi:10.1016/j.nimb.2013.10.033
Funders: A.S. El-Said acknowledges financial support provided by KACST through the Science and Technology Unit at KFUPM under project No. 11-NAN1650-04 as a part of the National Science, Technology and Innovation Plan.
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