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Local formation of nitrogen-vacancy centers in diamond by swift heavy ions

Schwartz, J. and Aloni, S. and Ogletree, D. F. and Tomut, M. and Bender, M. and Severin, D. and Trautmann, C. and Rangelow, I. W. and Schenkel, T. (2014):
Local formation of nitrogen-vacancy centers in diamond by swift heavy ions.
116, In: Journal of Applied Physics, (21), AIP Publishing LLC, p. 214107, ISSN 0021-8979, [Online-Edition: http://dx.doi.org/10.1063/1.4903075],
[Article]

Abstract

We exposed nitrogen-implanted diamonds to beams of swift heavy ions (∼1 GeV, ∼4 MeV/u) and find that these irradiations lead directly to the formation of nitrogen vacancy (NV) centers, without thermal annealing. We compare the photoluminescence intensities of swift heavy ion activated NV− centers to those formed by irradiation with low-energy electrons and by thermal annealing. NV− yields from irradiations with swift heavy ions are 0.1 of yields from low energy electrons and 0.02 of yields from thermal annealing. We discuss possible mechanisms of NV center formation by swift heavy ions such as electronic excitations and thermal spikes. While forming NV centers with low efficiency, swift heavy ions could enable the formation of three dimensional NV− assemblies over relatively large distances of tens of micrometers. Further, our results show that NV center formation is a local probe of (partial) lattice damage relaxation induced by electronic excitations from swift heavy ions in diamond.

Item Type: Article
Erschienen: 2014
Creators: Schwartz, J. and Aloni, S. and Ogletree, D. F. and Tomut, M. and Bender, M. and Severin, D. and Trautmann, C. and Rangelow, I. W. and Schenkel, T.
Title: Local formation of nitrogen-vacancy centers in diamond by swift heavy ions
Language: English
Abstract:

We exposed nitrogen-implanted diamonds to beams of swift heavy ions (∼1 GeV, ∼4 MeV/u) and find that these irradiations lead directly to the formation of nitrogen vacancy (NV) centers, without thermal annealing. We compare the photoluminescence intensities of swift heavy ion activated NV− centers to those formed by irradiation with low-energy electrons and by thermal annealing. NV− yields from irradiations with swift heavy ions are 0.1 of yields from low energy electrons and 0.02 of yields from thermal annealing. We discuss possible mechanisms of NV center formation by swift heavy ions such as electronic excitations and thermal spikes. While forming NV centers with low efficiency, swift heavy ions could enable the formation of three dimensional NV− assemblies over relatively large distances of tens of micrometers. Further, our results show that NV center formation is a local probe of (partial) lattice damage relaxation induced by electronic excitations from swift heavy ions in diamond.

Journal or Publication Title: Journal of Applied Physics
Volume: 116
Number: 21
Publisher: AIP Publishing LLC
Uncontrolled Keywords: Color-Centers, Implantation, Spins
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Ion-Beam-Modified Materials
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
Date Deposited: 12 Jan 2015 13:57
Official URL: http://dx.doi.org/10.1063/1.4903075
Identification Number: doi:10.1063/1.4903075
Funders: This work was performed in part at the Molecular Foundry and the National Center for Electron Microscopy at Lawrence Berkeley National Laboratory and was supported by the Office of Science, Office of Basic Energy Sciences , and Scientific User Facilities Division, of the U.S. Department of Energy under Contract No. DE-AC02—05CH11231 and by the Laboratory Directed Research and Development Program.
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